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HE8550D(TO-92)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size75KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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HE8550D(TO-92) Overview

Transistor

HE8550D(TO-92) Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codecompliant
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)160
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountNO
Nominal transition frequency (fT)100 MHz

HE8550D(TO-92) Preview

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.
1
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8050
TO-92
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25
℃)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
-40
-25
-6
1
-1.5
150
-65 ~ +150
UNIT
V
V
V
W
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Tj=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
Cob
TEST CONDITIONS
Ic=-100µA,I
E
=0
Ic=-2mA,I
B
=0
I
E
=-100µA,Ic=0
V
CB
=-35V,I
E
=0
V
EB
=-6V,Ic=0
V
CE
=-1V,Ic=-5mA
V
CE
=-1V,Ic=-100mA
V
CE
=-1V,Ic=-800mA
Ic=-800mA,I
B
=-80mA
Ic=-800mA,I
B
=-80mA
V
CE
=-1V,Ic=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=-10V,I
E
=0
f=1MHz
MIN
-40
-25
-6
TYP
MAX
UNIT
V
V
V
nA
nA
-100
-100
45
85
40
170
160
80
-0.28
-0.98
-0.66
190
9.0
500
-0.5
-1.2
-1.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
100
V
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-010,A
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
CLASSIFICATION OF hFE
RANK
RANGE
C
120-200
D
160-300
E
250-500
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-0.5
3
10
Fig.2 DC current Gain
3
-10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
Ic,Collector current (mA)
V
CE
=-1V
I
B
=-3.0mA
-0.3
H
FE
, DC current Gain
-0.4
V
CE
=-1V
2
-10
2
10
I
B
=-2.5mA
I
B
=-2.0mA
-0.2
I
B
=-1.5mA
I
B
=-1.0mA
1
10
1
-10
-0.1
I
B
=-0.5mA
0
-0
-0.4
-0.8
-1.2
-1.6
-2.0
0
10
-1
-10
0
-10
1
-10
2
-10
3
-10
0
-10
0
-0.2
-0.4
-0.6
-0.8
-1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
-10
3
10
Fig.5 Current gain-bandwidth
product
3
10
Fig.6 Collector output
Capacitance
Cob,Capacitance (pF)
Ic=10*I
B
Current Gain-bandwidth
product,f
T
(MHz)
Saturation voltage (mV)
V
CE
=-10V
2
10
3
-10
V
BE
(sat)
2
10
f=1MHz
I
E
=0
2
-10
1
10
1
10
V
CE
(sat)
1
-10
-1
-10
0
-10
1
-10
2
-10
3
-10
0
10
0
-10
1
-10
2
-10
3
-10
0
10
0
-10
1
-10
2
-10
3
-10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-010,A

HE8550D(TO-92) Related Products

HE8550D(TO-92) HE8550C(TO-92)
Description Transistor Transistor
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Code compliant compliant
Maximum collector current (IC) 1.5 A 1.5 A
Configuration Single Single
Minimum DC current gain (hFE) 160 120
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
surface mount NO NO
Nominal transition frequency (fT) 100 MHz 100 MHz
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