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F425R12NS4BOMA1

Description
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22
CategoryDiscrete semiconductor    The transistor   
File Size272KB,8 Pages
ManufacturerEUPEC [eupec GmbH]
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F425R12NS4BOMA1 Overview

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22

F425R12NS4BOMA1 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionECONOPACK-22
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)45 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 codeR-XUFM-X22
Number of components4
Number of terminals22
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)350 ns
Nominal on time (ton)100 ns

F425R12NS4BOMA1 Preview

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IGBT-Module
IGBT-modules
EconoPACK™1 mit schnellem IGBT2 für hochfrequentes Schalten als H-Brückenkonfiguration
EconoPACK™1 module with fast IGBT2 for high switching frequency as H-bridge configuration
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F425R12NS4BOMA1 Related Products

F425R12NS4BOMA1 F4-25R12NS4
Description Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22 Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-22
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH]
package instruction ECONOPACK-22 ECONOPACK-22
Reach Compliance Code unknown unknown
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 45 A 45 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X22 R-XUFM-X22
Number of components 4 4
Number of terminals 22 22
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Transistor component materials SILICON SILICON
Nominal off time (toff) 350 ns 350 ns
Nominal on time (ton) 100 ns 100 ns

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