FLC097WF
C-Band Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 28.8dBm (Typ.)
High Gain: G1dB = 8.5dB(Typ.)
High PAE:
η
add = 35%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna
stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
+15
-5
4.16
-65 to +175
175
Unit
V
V
W
°C
°C
Eudyna
recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Channel to Case
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 6 GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 200mA
VDS = 5V, IDS =15mA
IGS = -15µA
Min.
-
-
-1.0
-5
27.5
7.5
-
-
Limit
Typ. Max.
300
150
-2.0
-
28.8
8.5
35
25
450
-
-3.5
-
-
-
-
36
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
WF
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC097WF
C-Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
5
Total Power Dissipation (W)
4
3
2
1
Drain Current (mA)
300
200
VGS =0V
-0.5V
-1.0V
100
-1.5V
-2.0V
0
50 100 150 200
0
2
4
6
8
10
Case Temperature (°C)
OUTPUT POWER
& IM3 vs. INPUT POWER
Drain-Source Voltage (V)
Output Power (S.C.L.) (dBm)
24
22
20
18
16
14
VDS=10V
f1 = 6.0 GHz
f2 = 6.01GHz
2-tone Test
Pout
IM3
-10
IM3 (dBc)
-20
-30
-40
-50
6
8
10 12 14
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS=10V
28
IDS
≈
0.6 IDSS
4 GHz
P1dB &
η
add vs. VDS
f=6GHz
IDS
≈
0.6 IDSS
Output Power (dBm)
26
24
22
20
18
16
4 GHz
η
add
6 GHz
40
30
20
10
η
add (%)
28
η
add
40
30
27
10 12 14 16 18 20
Input Power (dBm)
8
9
10
Drain-Source Voltage (V)
2
η
add (%)
50
P1dB (dBm)
Pout
6 GHz
29
P1dB
50
FLC097WF
C-Band Power GaAs FET
+j50
+j25
6
5
12
11
4
10
10
3
9
8
7
6
25
50Ω
100
250
12
8
9
10
11
S11
S22
SCALE FOR |S12|
+j100
+90°
2GHz
.08
.06
3
.04
.02
4
5
2GHz
3
5
7
9
10
11
S21
S12
7
+j250
+j10
0
180°
4
3
2
1
12
11 10 9 8
6
7
0°
SCALE FOR |S21|
5 4
3
2GHz
-j10
2GHz
-j250
-j25
-j50
-j100
-90°
12
S-PARAMETERS
VDS = 10V, IDS = 180mA
FREQUENCY
(MHZ)
500
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
S11
MAG
.950
.857
.841
.832
.825
.820
.817
.807
.804
.799
.794
.784
S21
ANG
-61.4
S12
ANG
140.8
76.8
52.9
33.0
13.6
-6.3
-25.9
-43.2
-59.4
-76.6
-96.5
S22
ANG
55.5
7.0
-6.0
-13.1
-19.6
-26.4
-34.9
-36.2
-40.8
-45.9
-55.4
-66.9
MAG
10.087
4.537
3.114
2.398
1.978
1.681
1.418
1.212
1.080
1.011
.954
.864
MAG
.022
.038
.039
.039
.040
.042
.043
.045
.050
.059
.071
.082
MAG
.399
.344
.392
.445
.480
.506
.534
.571
.603
.620
.629
.649
ANG
-31.1
-83.9
-102.2
-115.6
-127.7
-142.2
-158.6
-172.0
176.6
165.2
149.3
130.8
-151.4
-176.1
166.3
148.7
129.8
112.1
97.6
83.6
67.2
47.0
26.9
-117.0
Download S-Parameters, click here
3
FLC097WF
C-Band Power GaAs FET
Case Style "WF"
Metal-Ceramic Hermetic Package
Ø1.6±0.01
(0.063)
2.5
(0.098)
1
2
3
2.5±0.15
(0.098)
1.0 Min.
(0.039)
0.1±0.05
(0.004)
1.0 Min.
(0.039)
2.5 Max.
(0.098)
0.6
(0.024)
8.5±0.2
(0.335)
6.1±0.1
(0.240)
0.8±0.1
(0.031)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
4
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