FRM9250R datasheet, PDF - EEWORLD Datasheet

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FRM9250R: DescriptionPower Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,; CategoryDiscrete semiconductor The transistor; File Size85KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FRM9250R Overview

Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

FRM9250R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	16 A
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

FRM9250R Preview

FRM9250D, FRM9250R,

FRM9250H

June 1998

16A, -200V, 0.300 Ohm, Rad Hard,

P-Channel Power MOSFETs

Package

TO-204AA

Features

• 16A, -200V, RDS(on) = 0.300

Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

• Gamma Dot

• Photo Current

• Neutron

- 12nA Per-RAD(Si)/sec Typically

- Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Description

Intersil Corporation has designed a series of SECOND GENERATION hardened

power MOSFETs of both N and P channel enhancement types with ratings from

100V to 500V, 1A to 60A, and on resistance as low as 25m

Ω

. Total dose hardness

is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from

1E13n/cm

for 500V product to 1E14n/cm

for 100V product. Dose rate hardness

(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-

rent limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for

any desired deviations from the data sheet.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

FRM9250D, R, H

-200

150

1.2

-55 to +150

300

UNITS

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20k

Ω

). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100

H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

FRM9250D, FRM9250R, FRM9250H Rev. A

FRM9250D, FRM9250R, FRM9250H

Pre-Radiation Electrical Speciﬁcations

TC = +25

C, Unless Otherwise Speciﬁed

LIMITS

PARAMETER

Drain-Source Breakdown Volts

Gate-Threshold Volts

Gate-body Leakage Forward

Gate-Body Leakage Reverse

Zero-Gate Voltage

Drain Current

Rated Avalanche Current

Drain-Source On-State Volts

Drain-source On Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate-Charge Threshold

Gate-Charge On State

Gate-Charge Total

Plateau Voltage

Gate-Charge Source

Gate-Charge Drain

Diode Forward Voltage

Reverse Recovery Time

Junction-To-Case

Junction-To-Ambient

SYMBOL

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS1

IDSS2

IDSS3

IAR

VDS(on)

RDS(on)

td(on)

td(off)

QG(th)

QG(on)

QGM

VGP

QGS

QGD

VSD

Free Air Operation

ID = 16A, VGD = 0

I = 16A; di/dt = 100A/

VDD = -100V, ID = 16A

IGS1 = IGS2

≤

VGS

≤

TEST CONDITIONS

VGS = 0, ID = 1mA

VDS = VGS, ID = 1mA

VGS = -20V

VGS = +20V

VDS = -200V, VGS = 0

VDS = -160V, VGS = 0

VDS = -160V, VGS = 0, TC = +125

Time = 20

VGS = -10V, ID = 16A

VGS = -10V, ID = 10A

VDD = -100V, ID = 16A

Pulse Width = 3

Period = 300

s, Rg = 25

Ω

≤

VGS

≤

10 (See Test Circuit)

MIN

-200

-2.0

125

-2

-0.6

MAX

-4.0

100

0.025

0.25

-5.04

0.300

100

250

670

320

244

500

-10V

-1.8

600

0.83

C/W

UNITS

Ω

ELECTRONIC SWITCH OPENS

WHEN I

IS REACHED

DUT

CURRENT I

TRANSFORMER

VARY t

TO OBTAIN

REQUIRED PEAK I

50Ω

DUT

50Ω

= -12V

≤

20V

50V-150V

FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT

FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT

FRM9250D, FRM9250R, FRM9250H Rev. A

FRM9250D, FRM9250R, FRM9250H

Post-Radiation Electrical Speciﬁcations

TC = +25

C, Unless Otherwise Speciﬁed

LIMITS

PARAMETER

Drain-Source

Breakdown Volts

(Note 4, 6)

(Note 5, 6)

Gate-Source

Threshold Volts

(Note 4, 6)

(Note 3, 5, 6)

Gate-Body

Leakage Forward

(Note 4, 6)

(Note 5, 6)

Gate-Body

Leakage Reverse

(Note 2, 4, 6)

(Note 2, 5, 6)

Zero-Gate Voltage

Drain Current

(Note 4, 6)

(Note 5, 6)

Drain-Source

On-state Volts

(Note 1, 4, 6)

(Note 1, 5, 6)

Drain-Source

On Resistance

(Note 1, 4, 6)

(Note 1, 5, 6)

NOTES:

1. Pulse test, 300

s max

2. Absolute value

3. Gamma = 300KRAD(Si)

4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13

5. Gamma = 1000KRAD(Si). Neutron = 1E13

6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS

7. Gamma data taken 7/21/90 on TA17752 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,

PA 19401

8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989

9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988

SYMBOL

BVDSS

VGS(th)

IGSSF

IGSSR

IDSS

VDS(on)

RDS(on)

TYPE

FRM9250D, R

FRM9250H

FRM9250D, R

FRM9250H

FRM9250D, R

FRM9250H

FRM9250D, R

FRM9250H

FRM9250D, R

FRM9250H

FRM9250D, R

FRM9250H

FRM9250D, R

FRM9250H

TEST CONDITIONS

VGS = 0, ID = 1mA

VGS = VDS, ID = 1mA

VGS = -20V, VDS = 0

VGS = +20V, VDS = 0

VGS = 0, VDS =-160V

VGS = 0, VDS = -160V

VGS = -10V, ID = 16A

VGS = -16V, ID = 16A

VGS = -10V, ID = 10A

VGS = -14V, ID = 10A

MIN

-200

-190

-2.0

MAX

-4.0

-6.0

100

200

100

200

100

-5.04

-7.56

0.300

0.450

UNITS

Ω

FRM9250D, FRM9250R, FRM9250H Rev. A

FRM9250D, FRM9250R, FRM9250H

Typical Performance Characteristics

FRM9250D, FRM9250R, FRM9250H Rev. A

FRM9250D, FRM9250R, FRM9250H

Typical Performance Characteristics

(Continued)

FRM9250D, FRM9250R, FRM9250H Rev. A

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FRM9250R Related Products

	FRM9250R	FRM9250H	FRM9250D
Description	Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,	Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,	Power Field-Effect Transistor, 16A I(D), 200V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Fairchild	Fairchild	Fairchild
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (Abs) (ID)	16 A	16 A	16 A
Maximum drain current (ID)	16 A	16 A	16 A
Maximum drain-source on-resistance	0.3 Ω	0.3 Ω	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	150 W	150 W	150 W
Maximum pulsed drain current (IDM)	48 A	48 A	48 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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