SMA6J5.0 thru 40A
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AC (SMA)
Cathode Band
Stand-off Voltage
5.0 to 40V
Peak Pulse Power
600W
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
Dimensions in inches
and (millimeters)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 600W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Very fast response time
Mechanical Data
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity:
The band denotes the cathode, which is
positive with respect to the anode under normal TVS
operation
Mounting Position:
Any
Weight:
0.002 oz., 0.064 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/carton
61 – 1.8K per 7" plastic Reel (12mm tape), 36K/carton
5A – 7.5K per 13" plastic Reel (12mm tape), 75K/carton
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1,2)
(see fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
600
See Next Table
70
110
25
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88389
07-May-02
www.vishay.com
1
SMA6J5.0 thru 40A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
6AD
6AE
6AF
6AG
6AH
6AK
6AL
6AM
6AN
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6BD
6BE
6BF
6BG
6BH
6BK
6BL
6BM
6BN
6BP
6BQ
6BR
6BS
6BT
6BU
6BV
6BW
6BX
6BY
6BZ
6CD
6CE
6CF
6CG
6CH
6CK
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
6.40
6.40
6.67
6.67
7.22
–7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
Test
Current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
F
= 3.5V at I
F
= 25A (uni-directional only)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(A)
(2)
V
C
(V)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
SMA6J5.0
SMA6J5.0A
SMA6J6.0
SMA6J6.0A
SMA6J6.5
SMA6J6.5A
SMA6J7.0
SMA6J7.0A
SMA6J7.5
SMA6J7.5A
SMA6J8.0
SMA6J8.0A
SMA6J8.5
SMA6J8.5A
SMA6J9.0
SMA6J9.0A
SMA6J10
SMA6J10A
SMA6J11
SMA6J11A
SMA6J12
SMA6J12A
SMA6J13
SMA6J13A
SMA6J14
SMA6J14A
SMA6J15
SMA6J15A
SMA6J16
SMA6J16A
SMA6J17
SMA6J17A
SMA6J18
SMA6J18A
SMA6J20
SMA6J20A
SMA6J22
SMA6J22A
SMA6J24
SMA6J24A
SMA6J26
SMA6J26A
SMA6J28
SMA6J28A
SMA6J30
SMA6J30A
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88389
07-May-02
SMA6J5.0 thru 40A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
6CL
6CM
6CN
6CP
6CQ
6CR
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
36.7
36.7
40.0
40.0
44.4
44.4
44.9
40.6
48.9
44.2
54.3
49.1
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
F
= 3.5V at I
F
= 25A (uni-directional only)
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(A)
(2)
V
C
(V)
1.0
1.0
1.0
1.0
1.0
1.0
10.2
11.3
9.3
10.3
8.4
9.3
59.0
53.3
64.3
58.1
71.4
64.5
SMA6J33
SMA6J33A
SMA6J36
SMA6J36A
SMA6J40
SMA6J40A
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88389
07-May-02
www.vishay.com
3
SMA6J5.0 thru 40A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
100
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
75
50
1
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0
0
25
50
75
100
125
150
175
200
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
Fig. 4 – Typical Junction Capacitance
C
J
— Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MHz
Measured at
Zero Bias
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
1,000
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
td
0
10
0
1.0
2.0
3.0
4.0
1
10
100
t — Time (ms)
V
WM
— Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
1000
100
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
8.3ms Single Half Sine-Wave
(JEDEC Method)
Transient Thermal Impedance (°C/W)
100
50
10
1
0.001
10
1
5
10
50
100
0.01
0.1
1
10
100
1000
t
p
— Pulse Duration (sec)
Number of Cycles at 60 Hz
www.vishay.com
4
Document Number 88389
07-May-02
Electronics Design Contest
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