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MXLPLAD15KP8.0AE3TR

Description
Trans Voltage Suppressor Diode, 15000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size291KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MXLPLAD15KP8.0AE3TR Overview

Trans Voltage Suppressor Diode, 15000W, 8V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

MXLPLAD15KP8.0AE3TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-PSSO-G1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage9.83 V
Minimum breakdown voltage8.89 V
Breakdown voltage nominal value9.36 V
Shell connectionCATHODE
Maximum clamping voltage13.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage8 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 15,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 7.0 to 200 V standoff voltages (V
WM
)
- Fast response
LEVELS
M, MA, MX, MXL
DEVICES
MPLAD15KP7.0A thru MPLAD15KP200CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote
129
for more details on the screening options
Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3,4: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2,3: MPLAD15KP7.0A to 200CA
o
Class 4: MPLAD15KP5.0 to 54CA
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):
o
Level 4: MPLAD15KP7.0A to 200CA
o
Level 5: MPLAD15KP7.0A to 100CA
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):
o
Level 4: MPLAD15KP7.0A to 28CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with
impulse repetition rate (duty factor) of 0.05% or less
t
clamping
(0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -55 °C to +150 °C
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC
board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C
if mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)
Solder temperatures: 260 °C for 10 s (maximum)
RF01004 Rev C, November 2010
High Reliability Product Group
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