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PMBT4403YS

Description
SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size263KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PMBT4403YS Overview

SMALL SIGNAL TRANSISTOR

PMBT4403YS Parametric

Parameter NameAttribute value
MakerNXP
package instruction,
Reach Compliance Codeunknown

PMBT4403YS Preview

PMBT4403YS
2 July 2015
40V, 600 mA double PNP switching transistor
Product data sheet
1. General description
Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted
Device (SMD) plastic package.
Double NPN complement: PMBT4401YS
2. Features and benefits
Double general-purpose switching transistor
AEC-Q101 qualified
3. Applications
Switching and linear amplification
4. Quick reference data
Table 1.
Symbol
Per transistor
h
FE
Per transistor
V
CEO
I
C
collector-emitter
voltage
collector current
open base
-
-
-
-
-40
-600
V
mA
DC current gain
V
CE
= -2 V; I
C
= -150 mA; t
p
≤ 300 µs;
δ ≤ 0.02; T
amb
= 25 °C
100
-
300
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
PMBT4403YS
40V, 600 mA double PNP switching transistor
5. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
E
B
C
E
B
C
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
TSSOP6 (SOT363)
1
2
sym018
3
6. Ordering information
Table 3.
Ordering information
Package
Name
PMBT4403YS
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
7. Marking
Table 4.
Marking codes
Marking code
[1]
Type number
PMBT4403YS
[1]
BJ%
% = placeholder for manufacturing site code
PMBT4403YS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
2 July 2015
2 / 15
NXP Semiconductors
PMBT4403YS
40V, 600 mA double PNP switching transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
-40
-40
-5
-600
-800
-200
250
300
400
550
150
150
150
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
single pulse; t
p
≤ 1 ms
-
-
T
amb
≤ 25 °C
[1]
[2]
-
-
-
-
-
-55
-65
T
amb
≤ 25 °C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm
600
P
tot
(mW)
400
(1)
2
aaa-016547
(2)
200
0
-75
-25
2
25
75
125
T
j
(°C)
175
(1) FR4 PCB; mounting pad for collector 1 cm
(2) FR4 PCB; standard footprint
Fig. 1.
PMBT4403YS
Per device: Power derating curves SOT363 (SC-88)
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
2 July 2015
3 / 15
NXP Semiconductors
PMBT4403YS
40V, 600 mA double PNP switching transistor
9. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
thermal resistance
from junction to
ambient
[1]
[2]
Thermal characteristics
Parameter
Conditions
in free air
[1]
[2]
Min
-
-
Typ
-
-
Max
500
417
Unit
K/W
K/W
Per device
R
th(j-a)
in free air
[1]
[2]
-
-
-
-
313
227
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm
2
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.5
0.2
aaa-016545
0.75
0.33
0.1
0.05
10
0.01
0
0.02
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 PCB, standard footprint
Fig. 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT4403YS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
2 July 2015
4 / 15
NXP Semiconductors
PMBT4403YS
40V, 600 mA double PNP switching transistor
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.2
aaa-016546
0.33
0.1
0.05
10
0.01
0
0.02
1
10
-5
10
-4
10
-3
10
-2
2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
Fig. 3.
Per Transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT4403YS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
2 July 2015
5 / 15
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