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SFC05-5.TF

Description
Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6
CategoryDiscrete semiconductor    diode   
File Size209KB,7 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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SFC05-5.TF Overview

Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6

SFC05-5.TF Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSEMTECH
Parts packaging codeDSBGA
package instructionFLIP CHIP, CSP-6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage6 V
Maximum clamping voltage11 V
ConfigurationCOMMON ANODE, 5 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeMO-211BB
JESD-30 codeR-PBGA-B6
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation200 W
Number of components5
Number of terminals6
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)240
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperature10

SFC05-5.TF Preview

PROTECTION PRODUCTS
Description
The SFC05-5 is a five line flip chip TVS array. They are
state-of-the-art devices that utilize solid-state silicon-
avalanche technology for superior clamping perfor-
mance and DC electrical characteristics. The SFC
series TVS diodes are designed to protect sensitive
semiconductor components from damage or latch-up
due to electrostatic discharge (ESD) and other voltage
induced transient events.
The SFC05-5 is a 6-bump, 0.5mm pitch flip chip array
with a 3x2 bump grid. It measures 1.5 x 1.0 x
0.65mm. This small outline makes the SFC05-5
especially well suited for portable applications. CSP
TVS devices are compatible with current pick and place
equipment and assembly methods.
Each device will protect up to five data or I/O lines.
The flip chip design results in lower inductance, virtually
eliminating voltage overshoot due to leads and inter-
connecting bond wires. They may be used to meet the
ESD immunity requirements of IEC 61000-4-2, Level 4
(±15kV air, ±8kV contact discharge).
ChipClamp
ΤΜ
Flip Chip TVS Diode Array
PRELIMINARY
Features
200 Watts peak pulse power (tp = 8/20µs)
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 20A (8/20µs)
Small chip scale package requires less board space
Low profile (< 0.65mm)
No need for underfill material
Protects five I/O or data lines
Low clamping voltage
Working voltage: 5V
Solid-state silicon-avalanche technology
SFC05-5
Mechanical Characteristics
JEDEC MO-211, 0.50 mm Pitch Flip Chip Package
Non-conductive top side coating
Marking : Marking Code
Packaging : Tape and Reel
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebook and Hand Held Computers
Portable Instrumentation
Smart Cards
MP3 Players
GPS
Device Dimensions
Schematic & PIN Configuration
SFC05-5 Maximum Dimensions (mm)
3 x 2 Grid CSP TVS (Bottom View)
Revision 08/02/04
1
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Peak Pulse Power (tp = 8/20µs)
Peak Pulse Current (tp = 8/20µs)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Operating Temperature
Storage Temperature
Symbol
P
p k
I
P P
V
ESD
T
J
T
STG
Value
200
20
>25
>15
-55 to +125
-55 to +150
PRELIMINARY
Units
Watts
A
kV
°C
°C
Electrical Characteristics (T=25
o
C)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp ing Voltage
Clamp ing Voltage
Junction Cap acitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
j
Conditions
Minimum
Typical
Maximum
5
Units
V
V
I
t
= 1mA
V
RWM
= 5V, T=25°C
I
PP
= 5A, tp = 8/20µs
Any I/O to Ground
I
PP
= 20A, tp = 8/20µs
Any I/O to Ground
V
R
= 0V, f = 1MHz
6
10
9.5
11
350
µA
V
V
pF
2004 Semtech Corp.
2
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
Peak Pulse Power - P
pk
(kW)
PRELIMINARY
Power Derating Curve
110
100
% of Rated Power or
PP
I
90
80
70
60
50
40
30
20
10
1
0.1
0.01
0.1
1
10
Pulse Duration - tp (µs)
100
1000
0
0
25
50
75
100
o
125
150
Ambient Temperature - T
A
( C)
Pulse Waveform
110
100
90
80
Percent of I
PP
70
60
50
40
30
20
10
0
0
5
10
15
Time (µs)
20
25
30
td = I
PP
/2
e
-t
Clamping Voltage vs. Peak Pulse Current
Waveform
Parameters:
tr = 8µs
td = 20µs
10.00
9.00
Clamping Voltage - V
c
(V)
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
0
5
10
15
20
25
Peak Pulse Current - I
PP
(A)
Waveform
Parameters:
tr = 8µs
td = 20µs
ESD Clamping (8kV Contact Discharge)
2004 Semtech Corp.
3
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Applications Information
Device Connection Options
The SFC05-5 has solder bumps located in a 3 x 2
matrix layout on the active side of the device. The
bumps are designated by the numbers 1 - 3 along the
horizontal axis and letters A - B along the vertical axis.
The lines to be protected are connected at bumps A1,
B1, A2, A3, and B3. Bump B2 is connected to ground.
All path lengths should be kept as short as possible to
minimize the effects of parasitic inductance in the
board traces.
Flip Chip TVS
Flip chip TVS devices are wafer level chip scale pack-
ages. They eliminate external plastic packages and
leads and thus result in a significant board space
savings. Manufacturing costs are minimized since they
do not require an intermediate level interconnect or
interposer layer for reliable operation. They are com-
patible with current pick and place equipment further
reducing manufacturing costs. Certain precautions
and design considerations have to be observed how-
ever for maximum solder joint reliability. These include
solder pad definition, board finish, and assembly
parameters.
Printed Circuit Board Mounting
Non-solder mask defined (NSMD) land patterns are
recommended for mounting the SFC05-5. Solder
mask defined (SMD) pads produce stress points near
the solder mask on the PCB side that can result in
solder joint cracking when exposed to extreme fatigue
conditions. The recommended pad size is 0.225 ±
0.010 mm with a solder mask opening of 0.350 ±
0.025 mm.
Grid Courtyard
The recommended grid placement courtyard is 1.3 x
1.8 mm. The grid courtyard is intended to encompass
the land pattern and the component body that is
centered in the land pattern. When placing parts on a
PCB, the highest recommended density is when one
courtyard touches another.
To Connector
PRELIMINARY
Device Schematic and Pin Configuration
Layout Example
To Protected IC
Ground
To Protected IC
NSMD Package Footprint
2004 Semtech Corp.
4
www.semtech.com
SFC05-5
PROTECTION PRODUCTS
Applications Information
(Continued)
Printed Circuit Board Finish
A uniform board finish is critical for good assembly
yield. Two finishes that provide uniform surface coat-
ings are immersion nickel gold and organic surface
protectant (OSP). A non-uniform finish such as hot air
solder leveling (HASL) can lead to mounting problems
and should be avoided.
Stencil Design
A properly designed stencil is key to achieving ad-
equate solder volume without compromising assembly
yields. A 0.100mm thick, laser cut, electro-polished
stencil with 0.275mm square apertures and rounded
corners is recommended.
Reflow Profile
The flip chip TVS can be assembled using the reflow
requirements for IPC/JEDEC standard J-STD-020 for
assembly of small body components. During reflow,
the component will self-align itself on the pad.
Circuit Board Layout Recommendations for Suppres-
sion of ESD
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
Place the TVS near the input terminals or connec-
tors to restrict transient coupling.
Minimize the path length between the TVS and the
protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
Assembly Guideline for Pb-Free Soldering
The following are recommendations for the assembly
of this device:
Assembly Parameter
Solder Ball Comp osition
Solder Stencil Design
Solder Stencil Thickness
Solder Paste Comp osition
Solder Paste Typ e
Solder Reflow Profile
PCB Solder Pad Design
PCB Pad Finish
R ecommendation
95.5Sn/3.8Ag/0.7Cu
Same as the SnPb design
0.100 mm (0.004")
Sn Ag (3-4) Cu (0.5-0.9)
Typ e 4 size sp here or smaller
p er JEDEC J-STD-020
Same as the SnPb Design
OSP or AuN i
PRELIMINARY
Stencil Design
2004 Semtech Corp.
5
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SFC05-5.TF Related Products

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Description Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, MO-211, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, LEAD FREE, FLIP CHIP, MO-211, CSP-6 Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 5 Element, Silicon, MO-211BB, FLIP CHIP, CSP-6
Is it lead-free? Contains lead Contains lead Contains lead Lead free Contains lead
Maker SEMTECH SEMTECH SEMTECH SEMTECH SEMTECH
Parts packaging code DSBGA DSBGA DSBGA DSBGA DSBGA
package instruction FLIP CHIP, CSP-6 FLIP CHIP, CSP-6 FLIP CHIP, MO-211, CSP-6 LEAD FREE, FLIP CHIP, MO-211, CSP-6 FLIP CHIP, CSP-6
Contacts 6 6 6 6 6
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 6 V 6 V 6 V 6 V 6 V
Configuration COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS COMMON ANODE, 5 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code MO-211BB MO-211BB MO-211BB MO-211BB MO-211BB
JESD-30 code R-PBGA-B6 R-PBGA-B6 R-PBGA-B6 R-PBGA-B6 R-PBGA-B6
Maximum non-repetitive peak reverse power dissipation 200 W 200 W 200 W 200 W 200 W
Number of components 5 5 5 5 5
Number of terminals 6 6 6 6 6
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form BALL BALL BALL BALL BALL
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Is it Rohs certified? incompatible incompatible - - incompatible
Maximum clamping voltage 11 V 11 V - - 9.5 V
JESD-609 code e0 e0 - - e0
Peak Reflow Temperature (Celsius) 240 240 - - 240
Terminal surface TIN LEAD TIN LEAD - - TIN LEAD
Maximum time at peak reflow temperature 10 10 - - 10

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