K7J163682B
K7J161882B
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
18Mb DDRII SRAM Specification
165FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 5.0 July 2006
K7J163682B
K7J161882B
Document Title
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM
Revision History
Rev. No.
0.0
0.1
0.2
0.3
History
1. Initial document.
1. Change the JTAG Block diagram
1. Add the speed bin (-25)
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Add the power up/down sequencing comment.
2. Update the DC current parameter (Icc and Isb).
3. Change the Max. speed bin from -33 to -30.
1. Change the ISB1.
Speed Bin
-30
-25
-20
-16
1.0
2.0
1. Final spec release
1. Delete the x8 Org.
2. Delete the 300MHz speed bin
1. Add the Industrial temp. & Lead Free Package
1. Add the 300MHz speed bin
1. Change Vss/SA to NC/SA in Pin Configuration
From
200
180
160
140
To
230
210
190
170
Oct. 31, 2003
Nov. 28, 2003
Final
Final
Draft Date
Dec. 16, 2002
Dec. 26, 2002
Jan. 27, 2003
Mar. 20, 2003
Remark
Advance
Preliminary
Preliminary
Preliminary
0.4
April. 4, 2003
Preliminary
0.5
June. 20, 2003
Preliminary
0.6
Oct. 20. 2003
Preliminary
3.0
4.0
5.0
Nov. 10. 2004
Mar. 29. 2006
Jul. 26 2006
Final
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-2-
Rev. 5.0 July 2006
K7J163682B
K7J161882B
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM
FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future fre-
quency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/
-0.1V for 1.8V I/O.
• Separate independent read and write data ports
• HSTL I/O
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• Full data coherency, providing most current data.
• DDR (Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks (K and K) for accurate DDR timing at clock
rising edges only.
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data
traceability.
• Single address bus.
• Byte write (x18, x36) function.
• Simple depth expansion with no data contention.
• Programmable output impedance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array) with body size of 13mmx15mm.
& Lead Free
• Operating in commercial and industrial temperature range.
Organization
Part
Number
K7J163682B-E(F)C(I)25
X36
K7J163682B-E(F)C(I)25
K7J163682B-E(F)C(I)20
K7J163682B-E(F)C(I)16
K7J161882B-E(F)C(I)25
X18
K7J161882B-E(F)C(I)25
K7J161882B-E(F)C(I)20
K7J161882B-E(F)C(I)16
Cycle Access
Unit
Time Time
4.0
4.0
5.0
6.0
4.0
4.0
5.0
6.0
0.45
0.45
0.45
0.50
0.45
0.45
0.45
0.50
ns
ns
ns
ns
ns
ns
ns
ns
* -E(F)C(I)
E(F) [Package type] : E-Pb Free, F-Pb
C(I) [Operating Temperature] : C-Commercial, I-Industrial
FUNCTIONAL BLOCK DIAGRAM
36 (or 18)
DATA
REG
D(Data in)
36 (or 18)
18
(or 19)
WRITE DRIVER
WRITE/READ DECODE
ADDRESS
18 (or 19)
ADD
REG
OUTPUT SELECT
SENSE AMPS
OUTPUT REG
R/W
LD
BW
X
4(or 2)
CTRL
LOGIC
512kx36
(1Mx18)
MEMORY
ARRAY
36
(or 18)
OUTPUT DRIVER
72
(or 36)
36
(or 18)
Q(Data Out)
CQ, CQ
K
K
C
C
(Echo Clock out)
CLK
GEN
SELECT OUTPUT CONTROL
Notes:
1. Numbers in ( ) are for x18 device
DDR II SRAM and Double Data Rate II comprise a new family of products developed by Cypress, Hitachi, IDT, Micron, NEC and Samsung technology.
-3-
Rev. 5.0 July 2006
K7J163682B
K7J161882B
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
Q29
Q30
D30
Doff
D31
Q32
Q33
D33
D34
Q35
TDO
2
NC
/
SA*
Q18
Q28
D20
D29
Q21
D22
V
REF
Q31
D32
Q24
Q34
D26
D35
TCK
3
NC
/
SA*
D18
D19
Q19
Q20
D21
Q22
V
DDQ
D23
Q23
D24
D25
Q25
Q26
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
BW
1
BW
0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
NC/SA*
D17
D16
Q16
Q15
D14
Q13
V
DDQ
D12
Q12
D11
D10
Q10
Q9
SA
10
NC/SA*
Q17
Q7
D15
D6
Q14
D13
V
REF
Q4
D3
Q11
Q1
D9
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
PIN CONFIGURATIONS
(TOP VIEW)
K7J163682B(512Kx36)
BW
2
BW
3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
Notes :
1. * Checked No Connect (NC) pins are reserved for higher density address, i.e. 3A for 72Mb, 9A for 36Mb, 10A for 144Mb and 2A for 288Mb.
2. BW
0
controls write to D0:D8, BW
1
controls write to D9:D17, BW
2
controls write to D18:D26 and BW
3
controls write to D27:D35.
PIN NAME
SYMBOL
K, K
C, C
CQ, CQ
Doff
SA
D0-35
PIN NUMBERS
6B, 6A
6P, 6R
11A, 1A
1H
4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L
9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N
1C,1D,2E,1G,1J,2K,1M,1N,2P
11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L
9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2L,3N
3P,1B,2C,1E,1F,2J,1K,1L,2M,1P
4A
8A
7B,7A,5A,5B
2H,10H
11H
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M, 8M,4N,8N
10R
11R
2R
1R
2A,3A,10A,9A
DESCRIPTION
Input Clock
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Address Inputs
Data Inputs
1
NOTE
Q0-35
Data Outputs
Read, Write Control Pin, Read active
when high
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
Block Write Control Pin, active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply (1.8 V)
Output Power Supply (1.5V or 1.8V)
Ground
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
No Connect
3
2
R/W
LD
BW
0
, BW
1,
BW
2
, BW
3
V
REF
ZQ
V
DD
V
DDQ
V
SS
TMS
TDI
TCK
TDO
NC
Notes:
1. C, C, K or K cannot be set to V
REF
voltage.
2. When ZQ pin is directly connected to V
DD
output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
3. Not connected to chip pad internally.
-4-
Rev. 5.0 July 2006
K7J163682B
K7J161882B
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
V
SS/
SA*
Q9
NC
D11
NC
Q12
D13
V
REF
NC
NC
Q15
NC
D17
NC
TCK
3
NC/SA*
D9
D10
Q10
Q11
D12
Q13
V
DDQ
D14
Q14
D15
D16
Q16
Q17
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
6
K
K
SA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC
BW
0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
V
SS/
SA*
NC
Q7
NC
D6
NC
NC
V
REF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
PIN CONFIGURATIONS
(TOP VIEW)
K7J161882B(1Mx18)
BW
1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
Notes:
1. * Checked No Connect (NC) pins are reserved for higher density address, i.e. 3A for 36Mb, 10A for 72Mb and 2A for 144Mb.
2. BW
0
controls write to D0:D8 and BW
1
controls write to D9:D17.
PIN NAME
SYMBOL
K, K
C, C
CQ, CQ
Doff
SA
D0-17
Q0-17
R/W
LD
BW
0
, BW
1
V
REF
ZQ
V
DD
V
DDQ
V
SS
TMS
TDI
TCK
TDO
NC
PIN NUMBERS
6B, 6A
6P, 6R
11A, 1A
1H
9A,4B,8B,5C-7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
10P,11N,11M,10K,11J,11G,10E,11D,11C,3B,3C,2D,
3F,2G,3J,3L,3M,2N
11P,10M,11L,11K,10J,11F,11E,10C,11B,2B,3D,3E,
2F,3G,3K,2L,3N,3P
4A
8A
7B, 5A
2H,10H
11H
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N
10R
11R
2R
1R
2A,3A,7A,10A,1B,5B,9B,10B,1C,2C,9C,1D,9D,10D,1E,2E,9E,1F,9
F,10F,1G,9G,10G,1J,2J,9J,1K,2K,9K,1L,9L,10L,1M,2M,
9M,1N,9N,10N,1P,2P,9P
DESCRIPTION
Input Clock
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Address Inputs
Data Inputs
Data Outputs
Read, Write Control Pin, Read active
when high
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
Block Write Control Pin,active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply (1.8 V)
Output Power Supply (1.5V or 1.8V)
Ground
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
No Connect
3
2
1
NOTE
Notes:
1. C, C, K or K cannot be set to V
REF
voltage.
2. When ZQ pin is directly connected to V
DD
output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
3. Not connected to chip pad internally.
-5-
Rev. 5.0 July 2006
Embedded System
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