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RMB6S

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size293KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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RMB6S Overview

Bridge Rectifier Diode,

RMB6S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-G4
Reach Compliance Codecompliant
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RMB2S
THRU
RMB6S
Technical Data
Data Sheet N1961, Rev. A
RMB2S-RMB6S Miniature Glass
Passivated Fast Recovery Surface Mount Bridge Rectifiers
Features
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
High temperature soldering guaranteed:260°C/
10 seconds at 5 lbs., (2.3kg) tension
Small size, simple installation
High surge current capability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
MB-S
Circuit Diagram
Mechanical Data
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Mounting Position: Any
Weight: 0.0044 ounce, 0.126 grams
Maximum Ratings
@T
A
=25°C unless otherwise specified
Type number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum average forward current
60Hz sine save resistance load
On glass-epoxy P.C.B.
On aluminum substrate
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
Method)
Symbol
V
RRM
V
RMS
I
F(AV)
RMB2S
200
140
RMB4S
400
280
0.5
0.8
30
RMB6S
600
420
Units
V
V
A
I
FSM
A
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

RMB6S Related Products

RMB6S RMB2S RMB4S
Description Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
Is it Rohs certified? conform to conform to conform to
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Reach Compliance Code compliant compliant compliant
Minimum breakdown voltage 600 V 200 V 400 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Maximum non-repetitive peak forward current 30 A 30 A 30 A
Number of components 4 4 4
Phase 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 0.5 A 0.5 A 0.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 600 V 200 V 400 V
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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