HYM76V4M655HGLT6-S datasheet, PDF

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HYM76V4M655HGLT6-S: DescriptionSynchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168; Categorystorage storage; File Size144KB，14 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYM76V4M655HGLT6-S Overview

Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168

HYM76V4M655HGLT6-S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	DMA
package instruction	DIMM, DIMM144,32
Contacts	168
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
JESD-609 code	e4
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.4 mm
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	0.8 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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4M x64 bits

PC100 SDRAM SO DI

based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM76V4M655HG(L)T6 Series

D E S C R IP T IO N

The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four

4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

The Hynix HYM76V4M655HG(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 32Mbytes

memory. The Hyundai HYM76V4M655HG(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock . All

inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high

bandwidth.

FEATURES

•

PC100MHz support

168pin SDRAM Unbuffered DIMM

Serial Presence Detect with EEPROM

1.00” (25.40mm) Height PCB with double sided com-

ponents

Single 3.3±0.3V power supply

- 1, 2, 4 or 8 or Full page for Sequential Burst

•

All device pins are compatible with LVTTL interface

- 1, 2, 4 or 8 for Interleave Burst

Data mask function by DQM

•

Programmable CAS Latency ; 2, 3 Clocks

•

SDRAM internal banks : four banks

Module bank : one physical bank

Auto refresh and self refresh

4096 refresh cycles / 64ms

Programmable Burst Length and Burst Type

O R D E R IN G IN F O R M A T IO N

Part No.

HYM76V4M655HGT6-8

HYM76V4M655HGT6-P

HYM76V4M655HGT6-S

HYM76V4M655HGLT6-8

HYM76V4M655HGLT6-P

HYM76V4M655HGLT6-S

Clock

Frequency

125MHz

100MHz

Internal

Bank

Ref.

Power

SDRAM

Package

Plating

Normal

4 Banks

Low Power

TSOP-II

Gold

125MHz

100MHz

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of

circuits described. No patent licenses are implied.

Rev. 0.3/Apr.01

HYM76V4M655HGLT6-S Related Products

	HYM76V4M655HGLT6-S	HYM76V4M655HGLT6-8	HYM76V4M655HGT6-P	HYM76V4M655HGLT6-P	HYM76V4M655HGT6-S
Description	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168
Parts packaging code	DMA	DMA	DMA	DMA	DMA
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	168	168	168	168	168
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	125 MHz	100 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	168	168	168	168	168
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX64	4MX64	4MX64	4MX64	4MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096
Maximum seat height	25.4 mm	25.4 mm	25.4 mm	25.4 mm	25.4 mm
self refresh	YES	YES	YES	YES	YES
Maximum standby current	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
Maximum slew rate	0.8 mA	0.8 mA	0.8 mA	0.8 mA	0.8 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	SK Hynix	SK Hynix	-	SK Hynix	SK Hynix

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