MIC5011
Micrel, Inc.
MIC5011
Minimum Parts High- or Low-Side MOSFET Driver
General Description
The MIC5011 is the “minimum parts count” member of the
Micrel MIC501X driver family. These ICs are designed to
drive the gate of an N-channel power MOSFET above the
supply rail in high-side power switch applications. The 8-pin
MIC5011 is extremely easy to use, requiring only a power
FET and nominal supply decoupling to implement either a
high- or low-side switch.
The MIC5011 charges a 1nF load in 60µs typical with no
external components. Faster switching is achieved by add-
ing two 1nF charge pump capacitors. Operation down to
4.75V allows the MIC5011 to drive standard MOSFETs in
5V low-side applications by boosting the gate voltage above
the logic supply. In addition, multiple paralleled MOSFETs
can be driven by a single MIC5011 for ultra-high current
applications.
Other members of the Micrel driver family include the
MIC5013 protected 8-pin driver.
For new designs, Micrel recommends the pin-compatible
MIC5014 MOSFET driver.
Features
• 4.75V to 32V operation
• Less than 1µA standby current in the “off” state
• Internal charge pump to drive the gate of an N-channel
power FET above supply
• Available in small outline SOIC packages
• Internal zener clamp for gate protection
• Minimum external parts count
• Can be used to boost drive to low-side power FETs
operating on logic supplies
• 25µs typical turn-on time with optional external
capacitors
• Implements high- or low-side drivers
Applications
•
•
•
•
Lamp drivers
Relay and solenoid drivers
Heater switching
Power bus switching
Typical Applications
14.4V
ON
Ordering Information
Part Number
Standard
MIC5011BN
Pb-Free
MIC5011YN
Temperature
Range
–40ºC to +85ºC
Package
8-pin Plastic
DIP
8-pin SOIC
10µF
+
1
V+
MIC5011
C1
8
Control Input
OFF
2 Input
Com
7
3 Source
C2
6
4
Gnd
Gate 5
MIC5011BM MIC5011YM –40ºC to +85ºC
IRF531
#6014
Figure 1. High Side Driver
ON
5V
48V
1
V+
Note: The MIC5011 is ESD sensitive.
10µF +
MIC5011
C1
8
Control Input
OFF
2 Input
Com
7
3 Source
C2
6
4
Gnd
Gate 5
100W
Heater
IRF530
Protected under one or more of the following Micrel patents:
patent #4,951,101; patent #4,914,546
Figure 2. Low Side Driver
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
July 2005
1
MIC5011
MIC5011
Micrel, Inc.
Absolute Maximum Ratings
(Note 1, 2)
Supply Voltage (V
+
), Pin 1
Input Voltage, Pin 2
Source Voltage, Pin 3
Current into Pin 3
Gate Voltage, Pin 5
Junction Temperature
–0.5V to 36V
–10V to V
+
–10V to V
+
50mA
–1V to 50V
150°C
Operating Ratings
(Notes 1, 2)
Power Dissipation
1.25W
θ
JA
(Plastic DIP)
100°C/W
θ
JA
(SOIC)
170°C/W
Ambient Temperature: B version
–40°C to +85°C
Storage Temperature
–65°C to +150°C
Lead Temperature
260°C
(Soldering, 10 seconds)
Supply Voltage (V
+
), Pin 1
4.75V to 32V high side
4.75V to 15V low side
Pin Description
(Refer to
Typical Applications)
Pin Number
1
2
3
4
5
6, 7, 8
Pin Name
V
+
Input
Source
Ground
Gate
C2, Com, C1
Drives and clamps the gate of the power FET. Will be clamped to approxi-
mately –0.7V by an internal diode when turning off inductive loads.
Optional 1nF capacitors reduce gate turn-on time; C2 has dominant effect.
Pin Function
Supply; must be decoupled to isolate from large transients caused by the
power FET drain. 10µF is recommended close to pins 1 and 4.
Turns on power MOSFET when taken above threshold (3.5V typical). Re-
quires <1 µA to switch.
Connects to source lead of power FET and is the return for the gate clamp
zener. Can safely swing to –10V when turning off inductive loads.
Pin Configuration
1
2
3
4
MIC5011
V+
Input
Source
Gnd
C1 8
Com 7
C2
Gate
6
5
MIC5011
2
July 2005
MIC5011
Test circuit. T
A
= –55°C to +125°C, V
+
= 15V, all switches open, unless otherwise specified.
Parameter
Supply Current, I
1
Conditions
V
+
= 32V
V
+
= 5V
Logic Input Voltage
V
+
= 4.75V
V
+
= 15V
Logic Input Current, I
2
Input Capacitance
Gate Drive, V
GATE
Zener Clamp,
Gate Turn-on Time, t
ON
(Note 4)
Gate Turn-off Time, t
OFF
Note 1
Note 2
Note 3
Note 4
Micrel, Inc.
Electrical Characteristics
(Note 3)
Min
V
IN
= 0V, S2 closed
V
IN
= 5V, S2 closed
V
IN
= V
+
= 32V
Typical
0.1
8
1.6
Max
10
20
4
2
Units
µA
mA
mA
V
V
V
µA
Adjust V
IN
for V
GATE
low
V
+
= 32V
Adjust V
IN
for V
GATE
high
V
IN
= 32V
V
+
= 4.75V, I
GATE
= 0, V
IN
= 4.5V
V
+
= 15V, V
S
= 15V
V
IN
= 0V
Adjust V
IN
for V
GATE
high
4.5
5.0
–1
1
5
7
24
11
11
10
27
12.5
13
25
4
15
16
50
10
µA
pF
V
V
V
V
µs
µs
Pin 2
S1, S2 closed,
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
V
+
= 15V, I
GATE
= 100µA, V
IN
= 5V
V
+
= 32V, V
S
= 32V
V
GATE
– V
SOURCE
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings.
The MIC5011 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
A
= 25°C and T
A
= 85°C, and 100% guaranteed over the entire
range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Appli-
cations Information.
Maximum value of switching speed seen at 125°C, units operated at room temperature will reflect the typical values
shown.
Test Circuit
V+
+ 1µF
1 V+
2 Input
MIC5011
C1 8
Com 7
1nF
1nF
V
GATE
V
IN
500Ω
1W
S2
VS
3 Source
C2 6
4 Gnd
Gate 5
1nF S1
I5
July 2005
3
MIC5011
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