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DE275-501N16A

Description
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size158KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Download Datasheet Parametric View All

DE275-501N16A Overview

VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

DE275-501N16A Parametric

Parameter NameAttribute value
Number of terminals6
Minimum breakdown voltage500 V
Processing package descriptionD2, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF power
Maximum leakage current16 A
highest frequency bandVERY high frequency band
DE275-501N16A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25°C
Derate 1.9W/°C above 25°C
T
c
= 25°C
V
DSS
I
D25
Maximum Ratings
500
500
±20
±30
16
96
16
20
5
>200
590
284
3.0
0.25
0.53
V
V
V
V
A
A
A
mJ
V/ns
GATE
=
=
=
=
500 V
16 A
0.4
590 W
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
I
DM
, di/dt
100A/µs, V
DD
V
DSS
,
T
j
150°C, R
G
= 0.2Ω
I
S
= 0
R
DS(on)
P
DC
DRAIN
V/ns
W
W
W
C/W
C/W
SG1
SG2
SD1
SD2
Features
Characteristic Values
min.
500
3.5
4.0
5.5
±100
50
1
.38
3
-55
175
-55
+175
300
2
5
8
+175
typ.
max.
V
V
nA
µA
mA
S
°C
°C
°C
°C
g
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
T
J
= 25°C unless otherwise specified
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25°C
T
J
= 125°C
V
GS
= 0
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
300µS, duty cycle d
2%
V
DS
= 20V, I
D
= 0.5 I
D25
pulse test
Advantages
Optimized for RF and high speed
High power density
switching at frequencies to 100MHz
Easy to mount—no insulators needed
1.6mm(0.063 in) from case for 10 s
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