= 315MHz); data-rate = 1kbps (Manchester encoded). T
A
= 25°C,
bold
values indicate –40°C
≤
T
A
≤
+85°C; current flow into device pins is positive; unless noted.
Symbol
I
OP
Parameter
Operating Current
Condition
continuous operation, f
RF
= 315MHz
polled with 10:1 duty cycle, f
RF
= 315MHz
continuous operation, f
RF
= 433.92MHz
polled with 10:1 duty cycle, f
RF
= 433.92MHz
Min
Typ
2.2
220
3.5
350
0.9
–97
–95
0.86
0.43
–20
30
0.1
±100
290
5.2
Max
3.2
Units
mA
µA
mA
µA
µA
dBm
dBm
MHz
MHz
dBm
µV
RMS
nA
kΩ
µA
I
STBY
Standby Current
Receiver Sensitivity (
Note 4
)
V
SHUT
= V
DD
f
RF
= 315MHz
f
RF
= 433.92MHz
RF Section, IF Section
f
IF
f
BW
IF Center Frequency
IF Bandwidth
Maximum Receiver Input
Spurious Reverse Isolation
AGC Attack to Decay Ratio
AGC Leakage Current
Note 6
Note 6
R
SC
= 50Ω
ANT pin, R
SC
= 50Ω,
Note 5
t
ATTACK
÷ t
DECAY
T
A
= +85°C
Reference Oscillator
Z
REFOSC
Reference Oscillator Input
Impedance
Reference Oscillator Source
Current
Note 8
Demodulator
Z
CTH
I
ZCTH(leak)
CTH Source Impedance
CTH Leakage Current
Demodulator Filter Bandwidth
Sweep Mode
(SWEN = VDD or OPEN)
Note 6
Demodulator Filter Bandwidth
Fixed Mode
(SWEN = VSS)
Note 6
Note 7
T
A
= +85°C
V
SEL0
= V
DD
. V
SEL1
= V
DD
V
SEL0
= V
SS
. V
SEL1
= V
DD
V
SEL0
= V
DD
. V
SEL1
= V
SS
V
SEL0
= V
SS
. V
SEL1
= V
SS
V
SEL0
= V
DD
. V
SEL1
= V
DD
V
SEL0
= V
SS
. V
SEL1
= V
DD
V
SEL0
= V
DD
. V
SEL1
= V
SS
V
SEL0
= V
SS
. V
SEL1
= V
SS
145
±100
4000
2000
1000
500
8000
4000
2000
1000
kΩ
nA
Hz
Hz
Hz
Hz
Hz
Hz
Hz
Hz
July 2008
4
M9999-070808
Micrel, Inc.
Symbol
V
IN(high)
V
IN(low)
I
OUT
V
OUT(high)
V
OUT(low)
t
R
, t
F
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. The device is not guaranteed to function outside its operating rating.
MICRF002/RF022
Parameter
Input-High Voltage
Input-Low Voltage
Output Current
Output High Voltage
Output Low Voltage
Output Rise and Fall Times
Condition
SEL0, SEL1, SWEN
SEL0, SEL1, SWEN
DO, WAKEB pins, push-pull
DO, WAKEB pins, I
OUT
= –1µA
DO, WAKEB pins, I
OUT
= +1µA
DO, WAKEB pins, C
LOAD
= 15pF
Min
Typ
Max
0.8
Units
V
DD
V
DD
µA
V
DD
Digital/Control Section
0.2
10
0.9
0.1
10
V
DD
µs
3. Devices are ESD sensitive, use appropriate ESD precautions. Meets class 1 ESD test requirements, (human body model HBM), in accordance with
MIL-STD-883C, method 3015. Do not operate or store near strong electrostatic fields.
4. Sensitivity is defined as the average signal level measured at the input necessary to achieve 10-2 BER (bit error rate). The RF input is assumed to be
matched to 50Ω.
5. Spurious reverse isolation represents the spurious components which appear on the RF input pin (ANT) measured into 50Ω with an input RF
matching network.
6.
Parameter scales linearly with reference oscillator frequency f
T
.
For any reference oscillator frequency other than 4.8970MHz, compute new
parameter value as the ratio:.
f
MHz
REFOSC
4.8970MHz
×
(parameter value at 4.8970MHz)
7.
Parameter scales inversely with reference oscillator frequency f
T
.
For any reference oscillator frequency other than 4.8970MHz, compute new
parameter value as the ratio:
4.8970MHz
f
REFOSC
MHz
×
(parameter value at 4.8970MHz)
8. Series resistance of the resonator (ceramic resonator or crystal) should be minimized to the extent possible. In cases where the resonator series
resistance is too great, the oscillator may oscillate at a diminished peak-to-peak level, or may fail to oscillate entirely. Micrel recommends that series
resistances for ceramic resonators and crystals not exceed 50Ohms and 100Ω respectively. Refer to Application Hint 35 for crystal
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