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2N90G-TF3-T

Description
2 Amps, 900 Volts N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size188KB,7 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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2N90G-TF3-T Overview

2 Amps, 900 Volts N-CHANNEL POWER MOSFET

2N90G-TF3-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)170 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (Abs) (ID)2.2 A
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance7.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
Maximum pulsed drain current (IDM)8.8 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
2N90
Preliminary
Power MOSFET
2 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
2N90
is an N-channel mode Power FET using UTC’s
advanced technology to provide costumers with planar stripe and
DMOS technology. This technology specialized in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
2N90
is universally applied in high efficiency switch
mode power supply.
FEATURES
* 2.2A, 900V, R
DS(on)
= 7.2Ω @V
GS
= 10 V
* Typically 5.5 pF low Crss
* High switching speed
* Typically 12 nC low gate charge
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N90L-TF3-T
2N90G-TF3-T
2N90L-TN3-R
2N90G-TN3-R
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220F
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-478.a

2N90G-TF3-T Related Products

2N90G-TF3-T 2N90L-TF3-T 2N90 2N90G-TN3-R 2N90L-TN3-R
Description 2 Amps, 900 Volts N-CHANNEL POWER MOSFET 2 Amps, 900 Volts N-CHANNEL POWER MOSFET 2 Amps, 900 Volts N-CHANNEL POWER MOSFET 2 Amps, 900 Volts N-CHANNEL POWER MOSFET 2 Amps, 900 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to - conform to conform to
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB TO-220AB - TO-252 TO-252
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 - 4 4
Reach Compliance Code compliant compliant - compli compli
Avalanche Energy Efficiency Rating (Eas) 170 mJ 170 mJ - 170 mJ 170 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 900 V 900 V - 900 V 900 V
Maximum drain current (Abs) (ID) 2.2 A 2.2 A - 2.2 A 2.2 A
Maximum drain current (ID) 2.2 A 2.2 A - 2.2 A 2.2 A
Maximum drain-source on-resistance 7.2 Ω 7.2 Ω - 7.2 Ω 7.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB - TO-252 TO-252
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSSO-G2 R-PSSO-G2
Number of components 1 1 - 1 1
Number of terminals 3 3 - 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 25 W 25 W - 43 W 43 W
Maximum pulsed drain current (IDM) 8.8 A 8.8 A - 8.8 A 8.8 A
surface mount NO NO - YES YES
Terminal form THROUGH-HOLE THROUGH-HOLE - GULL WING GULL WING
Terminal location SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON
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