R1163x SERIES
3-MODE 150mA LDO REGULATOR with the Reverse Current Protection
NO.EA-118-081118
OUTLINE
The R1163x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy and low
supply current. These ICs perform with the chip enable function and realize a standby mode with ultra low supply
current. To prevent the destruction by over current, the current limit circuit is included. The R1163x Series have
3-mode. One is standby mode with CE or standby control pin. Other two modes are realized with ECO pin. Fast
Transient Mode (FT mode) and Low Power Mode (LP mode) are alternative with ECO pin. Consumption current
is reduced at Low Power Mode compared with Fast Transient Mode. The output voltage is maintained between
FT mode and LP mode.
Further, the reverse current protection circuit is built-in. Therefore, if a higher voltage than V
DD
pin is forced to
the output pin, the reverse current to V
DD
pin is very small (Max. 0.1μA) , so it is suitable for backup circuit.
Since the packages for these ICs are SOT-23-5, SON-6, and DFN(PLP)1616-6 packages, high density
mounting of the ICs on boards is possible.
FEATURES
•
Supply Current ..................................................... Typ. 6.0μA (Low Power Mode),
Typ. 70μA (Fast Transient Mode)
•
Standby Mode ...................................................... Typ. 0.6μA
•
Reverse Current................................................... Max. 0.1μA
•
Input Voltage Range ............................................ 2.0V to 6.0V
•
Output Voltage ..................................................... Stepwise setting with a step of 0.1V
in the range of 1.5V to 5.0V is possible
•
Output Voltage Accuracy......................................
±1.5%
(±2.5% at Low Power Mode)
•
Temperature-Drift Coefficient of Output Voltage .. Typ.
±100ppm/°C
•
Dropout Voltage ................................................... Typ. 0.25V (I
OUT
=150mA,
V
OUT
=2.8V)
•
Ripple Rejection................................................... Typ. 70dB (f=1kHz, Fast Transient Mode)
•
Line Regulation .................................................... Typ. 0.02%/V (Fast Transient Mode)
•
Package ............................................................. DFN(PLP)1616-6, SON-6, SOT-23-5
•
Built-in fold-back protection circuit ....................... Typ. 40mA (Current at short mode)
•
Performs with Ceramic Capacitors ...................... C
IN
=Ceramic
1.0μF, C
OUT
=Ceramic
0.47μF
APPLICATIONS
•
Precision Voltage References.
•
Power source for electrical appliances such as cameras, VCRs and hand-held communication equipment.
•
Power source for battery-powered equipment.
1
R1163x
BLOCK DIAGRAM
R1163xxx1B
ECO
R1163xxx1D
ECO
V
DD
V
OUT
V
DD
Vref
V
OUT
Vref
Current Limit
Current Limit
Reverse Detector
Reverse
Detector
CE
GND
CE
GND
R1163xxx1E
ECO
V
DD
V
OUT
Vref
Current Limit
Reverse Detector
CE
GND
2
R1163x
SELECTION GUIDE
The output voltage, the auto-discharge function*, the package and the taping type for the ICs can be selected
at the user's request. The selection can be available by designating the part number as shown below;
R1163xxx1x-xx-x
↑↑
a b
Code
a
↑ ↑ ↑
c d e
←Part
Number
Contents
Designation of Package Type :
N: SOT-23-5
D: SON-6
K: DFN(PLP)1616-6
Setting Output Voltage (V
OUT
) :
Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible.
Exceptions: 1.85V=R1163x181x5-xx-x, 2.75V=R1163x271x5-xx-x,
2.85V=R1163x281x5-xx-x
Designation of Chip Enable Option :
B: "H" active type and without the auto-discharge function*.
D: "H" active and with the auto-discharge function*.
E: "H" active type and without auto-discharge function*.
ECO logic reverse type (Low Power mode at ECO="H")
Designation of Taping Type :
Refer to Taping Specifications;TR type is the standard direction.
Designation of composition of pin plating:
-F : Lead free solder plating (SOT-23-5, SON-6)
None: Au plating (DFN(PLP)1616-6)
b
c
d
e
*) When the mode is into standby with CE signal, auto discharge transistor turns on, and it makes the turn-off
speed faster than normal type.
3
R1163x
PIN CONFIGURATIONS
•
SOT-23-5
Top View
5
4
•
SON-6
Bottom View
4
5
6
6
5
4
5
•
DFN(PLP)1616-6
Top View
6
4
Bottom View
6
5
4
∗
(mark side)
∗
*
1
2
3
1
2
3
3
2
1
1
2
3
1
2
3
PIN DISCRIPTIONS
•
SOT-23-5
Pin No
1
2
3
4
5
Symbol
V
DD
GND
CE
ECO/ECO
V
OUT
Pin Description
Input Pin
Ground Pin
Chip Enable Pin
MODE alternative pin
Output pin
•
SON-6
Pin No
1
2
3
4
5
6
Symbol
V
DD
NC
V
OUT
ECO/ECO
GND
CE
Pin Description
Input Pin
No Connection
Output pin
MODE alternative pin
Ground Pin
Chip Enable Pin
•
*) Tab in the
parts have GND level.
(They are connected to the back side of this IC.)
Do not connect to other wires or land patterns.
DFN(PLP)1616-6
Pin No
1
2
3
4
5
6
Symbol
V
OUT
GND
ECO/ECO
CE
NC
V
DD
Pin Description
Output pin
Ground Pin
MODE alternative pin
Chip Enable pin
No Connection
Input Pin
*) Tab in the
parts have GND level.
(They are connected to the back side of this IC.)
Do not connect to other wires or land patterns.
4
R1163x
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
V
ECO
V
CE
V
OUT
I
OUT
P
D
Input Voltage
Input Voltage (ECO/ECO Pin)
Input Voltage (CE Pin)
Output Voltage
Output Current
Power Dissipation (SOT-23-5) *
Power Dissipation (SON-6) *
Power Dissipation (DFN(PLP)1616-6)*
Topt
Tstg
Operating Temperature Range
Storage Temperature Range
Item
Rating
6.5
−0.3
~ 6.5
−0.3
~ 6.5
−0.3
~ 6.5
180
420
500
560
−40
~ 85
−55
~ 125
°C
°C
mW
Unit
V
V
V
V
mA
*) For Power Dissipation, please refer to PACKAGE INFORMATION to be described.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
5
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