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S-LM1MA141KT3G

Description
Rectifier Diode, 1 Element, 0.1A, 40V V(RRM), Silicon, SC-70, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size215KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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S-LM1MA141KT3G Overview

Rectifier Diode, 1 Element, 0.1A, 40V V(RRM), Silicon, SC-70, 3 PIN

S-LM1MA141KT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage40 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high speed
switching applications. This device is housed in the SC–70 package which is
designed for low power surface mount applications.
• Fast t
rr
, < 3.0 ns
• Low C , < 2.0 pF
rr
LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
S-LM1MA142KT1G
SC–70/SOT–323 PACKAGE
SINGLE SILICON
SWITCHING DIODE
40/80 V–100 mA
SURFACE MOUNT
3
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LM1MA141KT1G
LM1MA141KT3G
LM1MA142KT1G
LM1MA142KT3G
Package
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
2
SC – 70
CATHODE
3
DEVICE MARKING
LM1MA141KT1G = MH
LM1MA142KT1G=MI
1
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
LM1MA141KT1G
LM1MA142KT1G
Peak Reverse Voltage L M1MA141KT1G
L M1MA142KT1G
Forward Current
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Symbol
V
R
V
RM
I
F
I
FM
I
FSM(1)
Value
40
80
40
80
100
225
500
Unit
V
dc
V
dc
mAdc
mAdc
mAdc
ANODE
2
NO CONNECTION
Marking Symbol
Type No. 141K 142K
Symbol
MH
MI
MH
X
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
in which the part was manufactured.
Max
150
150
–55 ~ +150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current LM1MA141KT1G
LM1MA142KT1G
Forward Voltage
Reverse Breakdown Voltage
LM1MA141KT1G
L M1MA142KT1G
Diode Capacitance
Reverse Recovery
1. t = 1 SEC
2. t
rr
Test Circuit
Rev.O 1/3
Symbol
I
R
V
F
V
R
C
D
trr
(2)
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
=0, f=1.0 MHz
I
F
=10mA,V
R
=6.0V
R
L
=100Ω,I
rr
=0.1 I
R
Min
40
80
Max
0.1
0.1
1.2
2.0
3.0
Unit
µAdc
Vdc
Vdc
pF
ns
Time

S-LM1MA141KT3G Related Products

S-LM1MA141KT3G S-LM1MA142KT1G S-LM1MA141KT1G LM1MA142KT3G S-LM1MA142KT3G LM1MA141KT3G
Description Rectifier Diode, 1 Element, 0.1A, 40V V(RRM), Silicon, SC-70, 3 PIN Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon, SC-70, 3 PIN Rectifier Diode, 1 Element, 0.1A, 40V V(RRM), Silicon, SC-70, 3 PIN Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon, SC-70, 3 PIN Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon, SC-70, 3 PIN Rectifier Diode, 1 Element, 0.1A, 40V V(RRM), Silicon, SC-70, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker LRC LRC LRC LRC LRC LRC
package instruction R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Maximum non-repetitive peak forward current 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W 0.15 W
Maximum repetitive peak reverse voltage 40 V 80 V 40 V 80 V 80 V 40 V
Maximum reverse recovery time 0.003 µs 0.003 µs 0.003 µs 0.003 µs 0.003 µs 0.003 µs
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Guideline AEC-Q101 AEC-Q101 AEC-Q101 - AEC-Q101 -
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