UNISONIC TECHNOLOGIES CO., LTD
3LN01M
Preliminary
Power MOSFET
N CHANNEL SILICON
MOSFET GENERAL-PURPOSE
SWITCHING DEVICE
APPLICATIONS
DESCRIPTION
The
3LN01M
uses UTC advanced technology to provide
excellent R
DS(ON)
, low gate charge and operation with low gate
voltages. This device’s general purpose is for switching device
applications.
FEATURES
* R
DS(ON)
= 3.7Ω @V
GS
= 4 V
* Ultra low gate charge ( typical 1.58 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 2.3 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Lead-free:
3LN01ML
Halogen-free: 3LN01MG
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Normal
3LN01M-AL3-R
Ordering Number
Lead Free
3LN01ML-AL3-R
Halogen-Free
3LN01MG-AL3-R
Package
SOT-323
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-285.a
3LN01M
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C)
RATINGS
UNIT
Drain-Source Voltage
V
30
Gate-Source Voltage
V
±10
DC
0.15
Drain Current
I
D
A
Pulse(Note 2)
0.6
Power Dissipation
P
D
0.15
W
Storage Temperature
T
STG
℃
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width≦10μs, Duty cycle≦1%
ELECTRICAL CHARACTERISTICS
(T
a
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Cutoff Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(OFF)
R
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
Q
G
TEST CONDITIONS
V
GS
=0V, I
D
=1mA
V
DS
=30V,V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=10V, I
D
=100µA
V
GS
=4V, I
D
=80mA
V
GS
=2.5V, I
D
=40mA
V
GS
=1.5V, I
D
=10mA
V
DS
=10V, I
D
=80mA
MIN
30
1
±10
0.4
2.9
3.7
6.4
0.22
7.0
5.9
2.3
1.58
0.26
0.31
19
65
155
120
0.87
1.2
1.3
3.7
5.2
12.8
TYP
MAX UNIT
V
µA
µA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
0.15
V
DS
=10V, V
GS
=0 V, f=1.0MHz
V
DS
=10V, V
GS
=10V, I
D
=150mA
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
See specified Test Circuit
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=150mA, V
GS
=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-285.a
3LN01M
Switching Time Test Circuit
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-285.a
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