UNISONIC TECHNOLOGIES CO., LTD
3N60
3 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
3N60
is a high voltage and high current power
MOSFET , designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 3.6Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
Lead-free:
3N60L
Halogen-free: 3N60G
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Normal
3N60-x-TA3-T
3N60-x-TF1-T
3N60-x-TF3-T
3N60-x-TM3-R
3N60-x-TN3-R
Ordering Number
Lead Free
3N60L-x-TA3-T
3N60L-x-TF1-T
3N60L-x-TF3-T
3N60L-x-TM3-R
3N60L-x-TN3-R
Halogen Free
3N60G-x-TA3-T
3N60G-x-TF1-T
3N60G-x-TF3-T
3N60G-x-TM3-R
3N60G-x-TN3-R
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
3N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-22F,
TM3: TO-251, TN3: TO-252
(3) A: 600V, B: 650V
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
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1 of 8
QW-R502-110,F
3N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
3N60-A
600
V
Drain-Source Voltage
V
DSS
3N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 1)
I
AR
3.0
A
Continuous Drain Current
I
D
3.0
A
Pulsed Drain Current (Note 1)
I
DM
12
A
Single Pulsed (Note 2)
E
AS
200
mJ
Avalanche Energy
Repetitive (Note 1)
E
AR
7.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220
75
Power Dissipation
P
D
W
TO-220F/TO-220F1
34
TO-251/TO-252
50
Junction Temperature
T
J
+150
℃
Operating Temperature
T
OPR
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220
Junction-to-Ambient
TO-220F/TO-220F1
TO-251/TO-252
TO-220
Junction-to-Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θ
JA
RATING
62.5
62.5
110
1.67
3.68
2.5
UNIT
°C/W
θ
JC
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
3N60-A
3N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 600 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
0.6
2.0
2.8
350
50
5.5
4.0
3.6
450
65
7.5
MIN TYP MAX UNIT
600
650
10
100
-100
V
V
μA
nA
nA
V/℃
V
Ω
pF
pF
pF
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
△
BV
DSS
/△T
J
I
D
= 250
μA,
Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 1.5A
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
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QW-R502-110,F
3N60
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Turn-On Delay Time
t
D(ON)
10
30
ns
Turn-On Rise Time
t
R
30
70
ns
V
DD
= 300V, I
D
= 3.0 A, R
G
= 25Ω
(Note 4, 5)
Turn-Off Delay Time
t
D(OFF)
20
50
ns
30
70
ns
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
10
13
nC
V
DS
= 480V,I
D
= 3.0A, V
GS
= 10 V
Gate-Source Charge
Q
GS
2.7
nC
(Note 4, 5)
4.9
nC
Gate-Drain Charge
Q
DD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 3.0 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
3.0
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
12
A
Forward Current
Reverse Recovery Time
t
RR
210
ns
V
GS
= 0 V, I
S
= 3.0 A,
dI
F
/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
Q
RR
1.2
μC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 64mH, I
AS
= 2.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
3.0A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
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QW-R502-110,F
3N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-110,F
3N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-110,F
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