IXFB38N100Q datasheet, PDF - EEWORLD Datasheet

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IXFB38N100Q: DescriptionPower Field-Effect Transistor, 38A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size140KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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IXFB38N100Q Overview

Power Field-Effect Transistor, 38A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN

IXFB38N100Q Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
package instruction	PLUS264, 3 PIN
Contacts	3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	5000 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	38 A
Maximum drain-source on-resistance	0.26 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	152 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

IXFB38N100Q Preview

Advance Technical Information

HiPerFET

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated,

Low Q

, Low Intrinsic R

High dV/dt,

Low t

IXFB 38N100Q

DSS

= 1000 V

D25

38 A

DS(on)

= 0.26

Ω

≤

300 ns

PLUS 264

(IXFB)

Symbol

DSS

DGR

GSM

D25

dv/dt

stg

1.6 mm (0.063 in.) from case for 10 s

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MΩ

Continuous

Transient

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤

, di/dt

≤

100 A/µs, V

≤

DSS

≤

150°C, R

= 2

Ω

= 25°C

Maximum Ratings

1000

±30

±40

152

5.0

890

-55 ... +150

150

-55 ... +150

300

V/ns

°C

(TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

Features

Double metal process for low gate

resistance

●

Unclamped Inductive Switching (UIS)

rated

●

Low package inductance

- easy to drive and to protect

●

Fast intrinsic rectifier

●

Applications

●

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

1000

3.0

DC-DC converters

Switched-mode and resonant-mode

power supplies, >500kHz switching

●

DC choppers

●

Pulse generation

●

Laser drivers

Advantages

●

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 1mA

= V

, I

= 8mA

±20

V, V

= 0

= V

DSS

= 0 V

= 10 V, I

= 0.5 • I

D25

Note 1

= 25°C

= 125°C

5.0 V

±200

100

µA

5 mA

0.26

Ω

●

PLUS 264

package for clip or spring

mounting

Space savings

High power density

98949 (10/02)

IXFB 38N100Q

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

Note 1

12600

= 0 V, V

= 25 V, f = 1 MHz

1020

130

= 10 V, V

= 0.5 • V

DSS

, I

= 0.5 • I

D25

= 1

Ω

(External)

230

= 10 V, V

= 0.5 • V

DSS

, I

= 0.5 • I

D25

0.14

0.13

Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 264

Outline

iss

oss

rss

d(on)

d(off)

g(on)

thJC

thCK

= 10 V; I

= 0.5 • I

D25

K/W

Source-Drain Diode

Symbol

Test Conditions

= 0 V

Repetitive;

pulse width limited by T

= I

, V

= 0 V, Note 1

= 25A

-di/dt = 100 A/µs

= 100 V

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

136

1.5

300

1.4

Note: 1. Pulse test, t

≤

300

µs,

duty cycle d

≤

2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

6,306,728B1

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