UNISONIC TECHNOLOGIES CO., LTD
7N60Z
7.4 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC
7N60Z
is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
Power MOSFET
FEATURES
* R
DS(ON)
= 1Ω
@V
GS
= 10 V
* Ultra Low Gate Charge (Typical 29 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= typical 16pF )
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
7N60ZL-x-TA3-T
7N60ZG-x-TA3-T
TO-220
7N60ZL-x-TQ2-T
7N60ZG-x-TQ2-T
TO-263
7N60ZL-x-TQ2-R
7N60ZG-x-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
7N60ZL-x-TA3-T
(1) Packing Type
(2) Package Type
(3) Drain-Source Voltage
(4) Lead Plating
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TQ2: TO-263
(3) A: 600V, B: 650V
(4) G: Halogen Free, L: Lead Free
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QW-R502-349.B
7N60Z
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
7N60Z-A
600
V
Drain-Source Voltage
V
DSS
7N60Z-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
7.4
A
Continuous Drain Current
I
D
7.4
A
Pulsed Drain Current (Note 1)
I
DM
29.6
A
Single Pulsed (Note 3)
E
AS
600
mJ
Avalanche Energy
14.2
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-263
142
W
Power Dissipation
P
D
TO-220F/TO-220F1
48
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I
AS
= 7.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤7.4A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
7N60Z-A
7N60Z-B
TO-220/ TO-263
TO-220/ TO-263
SYMBOL
BV
DSS
I
DSS
SYMBOL
θ
JA
θ
JC
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
RATINGS
62.5
0.88
MIN
600
650
1
10
-10
0.67
2.0
4.0
1
1400
180
21
70
170
140
130
38
UNIT
°C/W
°C/W
TYP MAX UNIT
V
V
μA
μA
μA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
I
D
= 250μA,
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=7.4A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, I
D
=7.4A, V
GS
=10 V
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
16
29
7
14.5
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QW-R502-349.B
7N60Z
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 7.4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0V, I
S
= 7.4 A,
Reverse Recovery Time
t
RR
dI
F
/ dt = 100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤ 300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4
7.4
29.6
320
2.4
V
A
A
ns
μC
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QW-R502-349.B
7N60Z
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-349.B
7N60Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-349.B
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