UNISONIC TECHNOLOGIES CO., LTD
8N60
7.5 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC
8N60
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 1.2Ω@V
GS
= 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N60L-x-TA3-T
8N60G-x-TA3-T
8N60L-x-TF1-T
8N60G-x-TF1-T
8N60L-x-TF3-T
8N60G-x-TF3-T
8N60L-x-T2Q-T
8N60G-x-T2Q-T
Note: Pin Assignment: G: Gate D: Drain S: Source
8N60L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Drain-Source Voltage
(4)Lead Plating
Package
TO-220
TO-220F1
TO-220F
TO-262
(1) T: Tube
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F
(2)
T2Q: TO-262
(3) A: 600V, B: 650V
(4) G: Halogen Free, L: Lead Free
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
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Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-115,D
8N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
8N60-A
600
V
Drain-Source Voltage
V
DSS
8N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
7.5
A
Continuous
I
D
7.5
A
Drain Current
30
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
230
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
147
W
Power Dissipation
P
D
TO-220F/TO-220F1
48
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 7.3mH, I
AS
= 7.5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤7.5A,
di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-262
Junction to Ambient
TO-220F/TO-220F1
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATING
62.5
62.5
0.85
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
8N60-A
8N60-B
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 600 V, V
GS
= 0 V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
0.7
2.0
1.0
4.0
1.2
MIN TYP MAX UNIT
600
650
10
100
-100
V
V
µA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
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QW-R502-115,D
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
△
BV
DSS
/△T
J
I
D
= 250
μA,
Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 3.75 A
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
965 1255
105 135
12
16
16.5 45
60.5 130
81 170
64.5 140
28
36
4.5
12
V
DD
= 300V, I
D
= 7.5 A, R
G
= 25Ω
(Note 1, 2)
V
DS
= 480V,I
D
= 7.5A, V
GS
= 10 V
(Note 1, 2)
UNISONIC TECHNOLOGIES CO., LTD
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8N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 7.5 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, I
S
= 7.5 A,
Reverse Recovery Time
t
RR
dI
F
/dt = 100 A/µs (Note 2)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤300μs,
Duty cycle≤2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4
7.5
30
365
3.4
V
A
A
ns
µC
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QW-R502-115,D
8N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-115,D
8N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
Power MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
D.U.T.
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-115,D
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