UNISONIC TECHNOLOGIES CO., LTD
7N60
7.4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
1
Power MOSFET
TO-220
DESCRIPTION
The UTC
7N60
is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
1
TO-220F
FEATURES
* R
DS(ON)
= 1.0Ω
@V
GS
= 10 V (7N60/7N60-R)
R
DS(ON)
= 1.2Ω
@V
GS
= 10 V (7N60-F/7N60-M/7N60-Q)
* Ultra Low Gate Charge (Typical 29 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= typical 16pF )
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
1
TO-220F1
1
TO-262
SYMBOL
1
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60L-x-TA3-T
7N60G-x-TA3-T
7N60L-x-TF3-T
7N60G-x-TF3-T
7N60L-x-TF1-T
7N60G-x-TF1-T
7N60L-x-T2Q-T
7N60G-x-T2Q-T
7N60L-x-TQ2-R
7N60G-x-TQ2-R
7N60L-x-TQ2-T
7N60G-x-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-076,Ja
7N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
7N60-A
600
V
Drain-Source Voltage
V
DSS
7N60-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
7.4
A
Continuous
I
D
7.4
A
Drain Current
29.6
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
530
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
142
W
Power Dissipation
P
D
TO-220F/TO-220F1
48
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I
AS
= 7.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤7.4A,
di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220/TO-262/TO-263
Junction to Ambient
TO-220F/TO-220F1
TO-220/TO-262/TO-263
Junction to Case
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
62.5
0.88
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
7N60-A
7N60-B
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
MIN TYP MAX UNIT
600
650
1
100
-100
0.67
2.0
4.0
1.0
1.2
1.2
1.2
1.0
1400
180
21
70
170
140
130
V
V
μA
nA
nA
V/°C
V
Ω
Ω
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
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QW-R502-076,Ja
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature
I = 250μA,
△BV
DSS
/△T
J D
Coefficient
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
7N60
7N60-F
V
GS
= 10V, I
D
= 3.7A 7N60-M
7N60-Q
7N60-R
Static Drain-Source On-State Resistance
R
DS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
V
DS
=25V, V
GS
=0V, f=1.0 MHz
16
V
DD
=300V, I
D
=7.4A, R
G
=25Ω
(Note 1, 2)
UNISONIC TECHNOLOGIES CO., LTD
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7N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=480V, I
D
=7.4A, V
GS
=10 V
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 7.4 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0V, I
S
= 7.4 A,
dI
F
/ dt = 100A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
29
7
14.5
38
nC
nC
nC
V
A
A
ns
μC
1.4
7.4
29.6
320
2.4
CLASSIFICATION OF R
DS(ON)
RANK
VALUE
-
1.0Ω
F
1.2Ω
M
1.2Ω
Q
1.2Ω
R
1.0Ω
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QW-R502-076,Ja
7N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-076,Ja
7N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
Power MOSFET
V
DS
V
GS
R
G
V
DD
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
D.U.T.
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
12V
0.2µF
50kΩ
0.3µF
Same
Type as
D.U.T.
V
DS
V
GS
DUT
3mA
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-076,Ja
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