TC55NEM208AFGV/ATGV55,70
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM
DESCRIPTION
Lead-Free
The TC55NEM208AFGV/ATGV is a 4,194,304-bit static random access memory (SRAM) organized as 524,288
words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a
single 2.7 to 5.5 V power supply. Advanced circuit technology provides both high speed and low power at an
operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power
mode at 1.8
µA
standby current (typ) when chip enable (
CE
) is asserted high. There are two control inputs.
CE
is
used to select the device and for data retention control, and output enable (
OE
) provides fast memory access. This
device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. And, with a guaranteed operating range of
−40°
to 85°C, the TC55NEM208AFGV/ATGV can
be used in environments exhibiting extreme temperature conditions. The TC55NEM208AFGV/ATGV is available in
a standard plastic 32-pin small-outline package (SOP) and plastic 32-pin thin-small-outline package (TSOP).
FEATURES
•
•
•
•
•
•
•
Low-power dissipation
Operating: 15 mW/MHz (typical)
Single power supply voltage of 2.7 to 5.5 V
Power down features using
CE
.
Data retention supply voltage of 2.0 to 5.5 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
−40°
to 85°C
Standby Current (maximum):20
µA
•
Access Times (maximum):
5 V
±
10%
55
Access Time
CE Access Time
OE Access Time
55 ns
55 ns
30 ns
70
70 ns
70 ns
35 ns
2.7 V~5.5 V
55
70
85 ns 100 ns
85 ns 100 ns
60 ns
70 ns
•
•
Package:
SOP32-P-525-1.27 (AFGV)
(Weight:1.12 g typ)
TSOP II32-P-400-1.27 (ATGV) (Weight:0.52 g typ)
Lead-Free
PIN ASSIGNMENT
(TOP VIEW)
32 PIN SOP &
TSOP
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
DD
A15
A17
R/W
A13
A8
A9
A11
OE
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
PIN NAMES
A0~A18
R/W
Address Inputs
Read/Write Control
OE
CE
I/O1~I/O8
V
DD
GND
Output Enable
Chip Enable
Data Inputs/Outputs
Power
Ground
(AFGV/ATGV)
2004-10-14
1/11
TC55NEM208AFGV/ATGV55,70
BLOCK DIAGRAM
CE
A4
A5
A6
A7
A8
A9
A11
A14
A15
A16
A18
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
V
DD
GND
MEMORY CELL ARRAY
2,048
×
256
×
8
(4,194,304)
ROW ADDRESS
BUFFER
ROW ADDRESS
REGISTER
ROW ADDRESS
DECODER
8
DATA
CONTROL
SENSE AMP
COLUMN ADDRESS
DECODER
CLOCK
GENERATOR
COLUMN ADDERSS
REGISTER
COLUMN ADDRESS
BUFFER
A0 A1 A2 A3 A10A12A13 A17
CE
OE
R/W
CE
CE
OPERATING MODE
MODE
Read
Write
Output Deselect
Standby
*
= don't care
H = logic high
L = logic low
CE
L
L
L
H
OE
L
*
R/W
H
L
H
*
I/O1~I/O8
Output
Input
High-Z
High-Z
POWER
I
DDO
I
DDO
I
DDO
I
DDS
H
*
MAXIMUM RATINGS
SYMBOL
V
DD
V
IN
V
I/O
P
D
T
solder
T
stg
T
opr
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
RATING
VALUE
−
0.3~7.0
−
0.3
*
~7.0
−
0.5~V
DD
+
0.5
UNIT
V
V
V
W
°C
°C
°C
0.6
260
−
55~150
−
40~85
*
:
−
2.0 V when measured at a pulse width of 20ns
2004-10-14
2/11
TC55NEM208AFGV/ATGV55,70
DC RECOMMENDED OPERATING CONDITIONS
(Ta
= −40°
to 85°C)
SYMBOL
V
DD
V
IH
V
IL
V
DH
PARAMETER
Power Supply Voltage
Input High Voltage
Input Low Voltage
Data Retention Supply Voltage
5 V
±
10%
MIN
4.5
2.4
−
0.3
*
2.7 V~5.5 V
MAX
5.5
MIN
2.7
−
0.3
*
TYP
5.0
⎯
⎯
⎯
TYP
5.0
⎯
⎯
⎯
MAX
5.5
V
DD
+
0.3
0.2
5.5
UNIT
V
V
V
V
V
DD
+
0.3 V
DD
−
0.2
0.6
5.5
2.0
2.0
*:
−
2.0V when measured at a pulse width of 20 ns
DC CHARACTERISTICS
(Ta
= −40°
to 85°C, V
DD
=
5 V
±
10%)
SYMBOL
I
IL
I
OH
I
OL
I
LO
l
DDO1
Operating Current
l
DDO2
I
DDS1
I
DDS2
Standby Current
PARAMETER
Input Leakage
Current
Output High Current
Output Low Current
Output Leakage
Current
V
IN
=
0 V~V
DD
V
OH
=
2.4 V
V
OL
=
0.4 V
CE
=
V
IH
or R/W
=
V
IL
or OE
=
V
IH
, V
OUT
=
0 V~V
DD
CE
=
V
IL
and R/W
=
V
IH
,
I
OUT
=
0 mA,
Other Input
=
V
IH
/V
IL
CE
=
0.2 V and R/W
=
V
DD
−
0.2 V,
I
OUT
=
0 mA,
Other Input
=
V
DD
−
0.2 V/0.2 V
CE
=
V
IH
CE
=
V
DD
−
0.2 V,
V
DD
=
2.0 V~5.5 V
Ta
=
25°C
Ta
= −
40~40°C
Ta
= −
40~85°C
MIN
1
µ
s
t
cycle
MIN
1
µ
s
TEST CONDITION
MIN
⎯
−
1.0
TYP
⎯
⎯
⎯
⎯
⎯
MAX
±
1.0
⎯
⎯
±
1.0
UNIT
µ
A
mA
mA
µ
A
2.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
35
mA
⎯
8
⎯
30
mA
⎯
3
⎯
3
⎯
mA
µ
A
1.8
⎯
⎯
3
20
DC CHARACTERISTICS
(Ta
= −40°
to 85°C, V
DD
=
3 V
±
10%)
SYMBOL
I
IL
I
OH
I
OL
I
LO
I
DDO2
PARAMETER
Input Leakage
Current
Output High Current
Output Low Current
Output Leakage
Current
Operating Current
V
IN
=
0 V~V
DD
V
OH
=
V
DD
−
0.2 V
V
OL
=
0.2 V
CE
=
V
IH
or R/W
=
V
IL
or OE
=
V
IH
, V
OUT
=
0 V~V
DD
CE
=
0.2 V and R/W
=
V
DD
−
0.2 V,
I
OUT
=
0 mA,
Other Input
=
V
DD
−
0.2 V/0.2 V
CE
=
V
DD
−
0.2 V
MIN
t
cycle
1
µ
s
TEST CONDITION
MIN
⎯
−
0.1
TYP
⎯
⎯
⎯
⎯
⎯
MAX
±
1.0
⎯
⎯
±
1.0
UNIT
µ
A
mA
mA
µ
A
0.1
⎯
⎯
⎯
⎯
⎯
⎯
30
mA
⎯
⎯
3
1.6
⎯
⎯
Ta
=
25°C
I
DDS2
Standby Current
Ta
= −
40~40°C
Ta
= −
40~85°C
3
20
µ
A
CAPACITANCE
(Ta
=
25°C, f
=
1 MHz)
SYMBOL
C
IN
C
OUT
Note:
PARAMETER
Input Capacitance
Output Capacitance
V
IN
=
GND
V
OUT
=
GND
TEST CONDITION
MAX
10
10
UNIT
pF
pF
This parameter is periodically sampled and is not 100% tested.
2004-10-14
3/11
TC55NEM208AFGV/ATGV55,70
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
= −40°
to 85°C, V
DD
=
5 V
±
10%)
READ CYCLE
TC55NEM208AFGV/ATGV
SYMBOL
PARAMETER
MIN
t
RC
t
ACC
t
CO
t
OE
t
COE
t
OEE
t
OD
t
ODO
t
OH
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Output Data Hold Time
55
⎯
⎯
⎯
55
MAX
⎯
70
MIN
70
⎯
⎯
⎯
UNIT
MAX
⎯
55
55
30
⎯
⎯
70
70
35
⎯
⎯
5
0
⎯
⎯
5
0
⎯
⎯
ns
25
25
⎯
30
30
⎯
10
10
WRITE CYCLE
TC55NEM208AFGV/ATGV
SYMBOL
PARAMETER
MIN
t
WC
t
WP
t
CW
t
AS
t
WR
t
ODW
t
OEW
t
DS
t
DH
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Address Setup Time
Write Recovery Time
R/W Low to Output High-Z
R/W High to Output Active
Data Setup Time
Data Hold Time
55
40
45
0
0
⎯
55
MAX
⎯
⎯
⎯
⎯
⎯
70
MIN
70
50
55
0
0
⎯
UNIT
MAX
⎯
⎯
⎯
⎯
⎯
ns
25
⎯
⎯
⎯
30
⎯
⎯
⎯
0
25
0
0
30
0
AC TEST CONDITIONS
PARAMETER
Input pulse level
t
R
, t
F
Timing measurements
Reference level
Output load
TEST CONDITION
0.4 V, 2.6 V
5 ns
1.5 V
1.5 V
30 pF
+
1 TTL Gate (55)
100 pF
+
1 TTL Gate (70)
2004-10-14
4/11
TC55NEM208AFGV/ATGV55,70
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
= −40°
to 85°C, V
DD
=2.7
to 5.5 V)
READ CYCLE
TC55NEM208AFGV/ATGV
SYMBOL
PARAMETER
MIN
t
RC
t
ACC
t
CO
t
OE
t
COE
t
OEE
t
OD
t
ODO
t
OH
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Output Data Hold Time
85
⎯
⎯
⎯
55
MAX
⎯
70
MIN
100
⎯
⎯
⎯
UNIT
MAX
⎯
85
85
60
⎯
⎯
100
100
70
⎯
⎯
5
0
⎯
⎯
5
0
⎯
⎯
ns
35
35
⎯
40
40
⎯
10
10
WRITE CYCLE
TC55NEM208AFGV/ATGV
SYMBOL
PARAMETER
MIN
t
WC
t
WP
t
CW
t
AS
t
WR
t
ODW
t
OEW
t
DS
t
DH
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Address Setup Time
Write Recovery Time
R/W Low to Output High-Z
R/W High to Output Active
Data Setup Time
Data Hold Time
85
55
60
0
0
⎯
55
MAX
⎯
⎯
⎯
⎯
⎯
70
MIN
100
60
70
0
0
⎯
UNIT
MAX
⎯
⎯
⎯
⎯
⎯
ns
35
⎯
⎯
⎯
40
⎯
⎯
⎯
0
35
0
0
40
0
AC TEST CONDITIONS
PARAMETER
Input pulse level
t
R
, t
F
Timing measurements
Reference level
Output load
TEST CONDITION
0.2 V, V
DD
−
0.2 V
5 ns
1.5 V
1.5 V
30 pF (Include Jig) (55)
100 pF (Include Jig) (70)
2004-10-14
5/11
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