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KSA1381E

Description
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size73KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSA1381E Overview

Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

KSA1381E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)7 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

KSA1381E Preview

KSA1381
KSA1381
CRT Display, Video Output
• High Collector-Emitter Breakdown Voltage : V
CEO
= -300V
• Low Reverse Transfer Capacitance : C
re
= 2.3pF at V
CB
= -30V
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 300
- 300
-5
- 100
- 200
7
1.2
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
re
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Test Condition
I
C
= - 10µA, I
E
= 0
I
C
= - 1mA, I
B
= 0
I
E
= - 10µA, I
C
= 0
V
CB
= - 200V, I
E
= 0
V
EB
= - 4V, I
C
= 0
V
CE
= - 10V, I
C
= - 10mA
I
C
= - 20mA, I
B
= - 2mA
I
C
= - 20mA, I
B
= - 2mA
V
CE
= - 30V, I
C
= - 10mA
V
CB
= - 30V, f = 1MHz
V
CB
= - 30V, f = 1MHz
150
3.1
2.3
40
Min.
- 300
- 300
-5
- 0.1
- 0.1
320
- 0.6
-1
V
V
MHz
pF
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
C
40 ~ 80
D
60 ~ 120
E
100 ~ 200
F
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1381
Typical Characteristics
-20
-10
I
B
= -140㎂
I
B
= -120㎂
I
B
= -60㎂
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
I
B
= -50㎂
-8
-16
I
B
= -100㎂
I
B
= -80㎂
I
B
= -60㎂
-8
I
B
= -40㎂
-6
-12
I
B
= -30㎂
-4
I
B
= -40㎂
-4
I
B
= -20㎂
I
B
= -10㎂
I
B
= -20㎂
I
B
= 0㎂
-2
I
B
= 0㎂
-0
-8
-10
-0
-20
-40
-60
-80
-100
-0
-0
-2
-4
-6
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1k
-10
V
CE
= -10V
Ic = 10 I
B
h
FE
, DC CURRENT GAIN
-1
V
BE
(sat)
100
-0.1
V
CE
(sat)
10
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
1000
-160
V
CE
= -30V
-140
V
CE
= -10V
I
C
[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
-120
100
-100
-80
-60
10
-40
-20
1
-0.1
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Base-Emitter On Voltage
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1381
Typical Characteristics
(Continued)
100
100
I
E
=0
f=1MHz
f=1MHz
C
ob
[pF], CAPACITANCE
10
C
re
[pF], CAPACITANCE
-1
-10
-100
-1000
10
1
1
0.1
-0.1
0.1
-0.1
-1
-10
-100
-1000
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 7. Collector Output Capacitance
Figure 8. Reverse Transfer Capacitance
1000
8
I
C
[mA], COLLECTOR CURRENT
7
P
C
[W], POWER DISSIPATION
I
C
(Pulse) MAX.
I
C
(DC) MAX.
100
6
50
0u
s
5
D
C
(T
C
T
c
4
=2
DC
10
(T
a
=2
1ms
10ms
5
)
5
3
)
2
T
a
1
1
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T[ C], TEMPERATURE
Figure 9. Safe Operating Area
Figure 10. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1381
Package Demensions
TO-126
±0.10
3.90
8.00
±0.30
3.25
±0.20
14.20MAX
ø3.20
±0.10
11.00
±0.20
(1.00)
0.75
±0.10
1.60
±0.10
0.75
±0.10
±0.30
(0.50)
1.75
±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
13.06
16.10
±0.20
0.50
–0.05
+0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E

KSA1381E Related Products

KSA1381E KSA1381D KSA1381F KSA1381C
Description Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code SIP SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 300 V 300 V 300 V 300 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 160 40
JEDEC-95 code TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 7 W 7 W 7 W 7 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
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