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MA4GP030-277

Description
GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 277, DIE-1
CategoryDiscrete semiconductor    diode   
File Size325KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
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MA4GP030-277 Overview

GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 277, DIE-1

MA4GP030-277 Parametric

Parameter NameAttribute value
MakerTE Connectivity
Parts packaging codeDIE
package instructionS-XUUC-N1
Contacts1
Manufacturer packaging codeCASE 277
Reach Compliance Codeunknown
Other featuresTTL COMPATIBLE
applicationSWITCHING
ConfigurationSINGLE
Maximum diode capacitance0.06 pF
Diode component materialsGALLIUM ARSENIDE
Maximum diode forward resistance2 Ω
Diode typePIN DIODE
frequency bandKA BAND
JESD-30 codeS-XUUC-N1
Minority carrier nominal lifetime0.01 µs
Number of components1
Number of terminals1
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Maximum power dissipation0.25 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formNO LEAD
Terminal locationUPPER
GaAs PIN Diode Chips
RoHS Compliant
Features
V1
May Be Directly Driven By TTL Signals
RoHS Compliant
Low Series Resistance
Fast Switching Speed
No Reverse Bias Required
Description
Anode
Gallium Arsenide PIN diodes offer improved
performance characteristics over silicon in many
microwave semiconductor applications These
benefits result from the intrinsic semiconductor
properties of GaAs. Its inherent high carrier mobility
results in a low resistance fast switching device. The
low carrier concentration in the I region layer
produces a near zero punch through bias voltage.
Gallium Arsenide's high band gap also assures it will
operate at high operating temperatures.
Switching speeds in the low nanosecond range
using an inexpensive TTL buffer logic is attainable
with GaAs PIN diodes. This performance can be
achieved because GaAs PIN diodes exhibit high
impedance at a positive bias (up to .5V). Reverse
bias is not required for many GaAs PIN diode
applications. Low loss, in switch and phase shifter
circuits at frequencies up to 40 GHz is possible as a
result of low parasitic series resistance in the
conducting and non-conducting states.
M/A-COM’s GaAs PIN diode chips are also available
in several different package styles. See page 4
Full Area Cathode
MIL-STD 750 Environmental Ratings
Parameter
Temp. Cycling
Vibration
Constant Acceleration
Moisture Resistance
(Packaged diodes)
Method
1051
2056
2006
Level
5cycles
-65°C to +150°C
15g’s
20,000g”s
Absolute Maximum Ratings
1
Parameter
Operating Temperature
Storage Temperature
Power Dissipation
Junction Temperature
Mounting Temperature
Maximum Value
-65°C to +175°C
-65°C to +175°C
0.25W @ 25°C
+175°C
+320°C for 10 seconds
1021
10 Days
1. Exceeding these limits may cause permanent damage.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product
information.

MA4GP030-277 Related Products

MA4GP030-277 MA4GP022-277 MA4GP022-137 MA4GP03030 MA4GP030-30 MA4GP030120 MA4GP030-120 MA4GP030-1056 MA4GP030-276
Description GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 277, DIE-1 GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 277, DIE-1 GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 137, 2 PIN 100V, GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 30, 2 PIN 100V, GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 30, 2 PIN 100V, GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 120, 2 PIN 100V, GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 120, 2 PIN GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 1056, 2 PIN GALLIUM ARSENIDE, PIN DIODE, ROHS COMPLIANT, CASE 276, 2 PIN
package instruction S-XUUC-N1 S-XUUC-N1 O-CRDB-F2 ROHS COMPLIANT, CASE 30, 2 PIN O-CEMW-N2 O-CEMW-N2 O-CEMW-N2 R-CDSO-C2 O-CXMW-G2
Contacts 1 1 2 2 2 2 2 2 2
Manufacturer packaging code CASE 277 CASE 277 CASE 137 CASE 30 CASE 30 CASE 120 CASE 120 CASE 1056 CASE 276
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown unknown unknown
Other features TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE TTL COMPATIBLE
application SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
Diode type PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
frequency band KA BAND KA BAND KA BAND KA BAND KA BAND KA BAND KA BAND KA BAND KA BAND
JESD-30 code S-XUUC-N1 S-XUUC-N1 O-CRDB-F2 O-CEMW-N2 O-CEMW-N2 O-CEMW-N2 O-CEMW-N2 R-CDSO-C2 O-CXMW-G2
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 1 1 2 2 2 2 2 2 2
Package body material UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape SQUARE SQUARE ROUND ROUND ROUND ROUND ROUND RECTANGULAR ROUND
Package form UNCASED CHIP UNCASED CHIP DISK BUTTON MICROWAVE MICROWAVE MICROWAVE MICROWAVE SMALL OUTLINE MICROWAVE
Maximum power dissipation 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES
technology POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
Terminal form NO LEAD NO LEAD FLAT NO LEAD NO LEAD NO LEAD NO LEAD C BEND GULL WING
Terminal location UPPER UPPER RADIAL END END END END DUAL UNSPECIFIED
Maker TE Connectivity - - TE Connectivity TE Connectivity TE Connectivity TE Connectivity TE Connectivity TE Connectivity
Maximum diode capacitance 0.06 pF 0.15 pF - 0.06 pF 0.06 pF 0.06 pF 0.06 pF - -
Maximum diode forward resistance 2 Ω 1 Ω - 2 Ω 2 Ω 2 Ω 2 Ω - -
Minority carrier nominal lifetime 0.01 µs 0.005 µs - 0.02 µs 0.02 µs 0.02 µs 0.02 µs - -

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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