Fairchild
Semiconductor
Infrared Emitting Diodes, Switches, and Sensors
Infrared Emitting Diodes (continued)
Mfr.Õs
Type
F5F1
F5G1
LED55B
LED55C
LED56
LED56F
QEB421
QEC113
QEC122
QED123
QED222
QED233
QED234
QED522
QED523
QEE113
QEE122
QEE123
Fig.
C
C
A
A
A
B
D
E
E
F
F
F
F
G
G
H
H
H
Power Out
Min.
0.280 mW/sr
0.600 mW/sr
5.400 mW
5.400 mW
1.500 mW
1.500 mW
4.000 mW/sr
14.000 mW/sr
27.000 mW/sr
80.000 mW/sr
50.000 mW/sr
10.000 mW/sr
27.000 mW/sr
20.000 mW/sr
40.000 mW/sr
3.000 mW/sr
4.000 mW/sr
8.000 mW/sr
V
F
Max.
1.7
1.7
1.7
1.7
1.7
1.7
1.8
1.5
1.7
1.7
1.7
1.5
1.5
1.7
1.7
1.5
1.7
1.5
Peak Emission
Wavelength (nm)
940
880
940
940
940
940
880
940
880
880
880
940
940
880
880
940
880
880
Beam Angle
1
/
2
Angle (¡)
±35
±35
±10
±10
±10
±40
±60
±8
±8
±9
±20
±20
±20
±15
±15
±25
±25
±25
Infrared Emitting Diodes, Switches, and Sensors
Slotted Optical Switches
Mfr.Õs
Type
OPB804
H21A1
H22A1
H21B1
H22B1
H21LTI
H22LTI
MOC70P1
QVE00118
QVE00039
QVE00112
Fig.
I
J
K
J
K
L
M
N
O
P
Q
Output
Type
Transistor
Transistor
Transistor
Darlington
Darlington
Optologic
Optologic
Transistor
Transistor
Transistor
Optologic
Min. Output
I
C
@ I
F
(mA)
0.5 @ 20 mA
1.0 @ 20 mA
1.0 @ 20 mA
7.5 @ 10 mA
7.5 @ 10 mA
Inverter Ñ O/C
Inverter Ñ O/C
1.0 @ 20 mA
0.5 @ 20 mA
0.5 @ 20 mA
Inverter Ñ O/C
Gap Width
(In.)
0.150
0.124
0.124
0.124
0.124
0.124
0.124
0.200
0.196
0.094
0.118
Lead Spacing
(In.)
0.300
0.284
0.284
0.284
0.284
0.284
0.284
0.380
0.354
Wires
Wires
Slotted Optical Switches with Internal Dust Covers
9
OPB860N55
OPB862N55
OPB865N55
OPB867N55
OPB860T55
OPB862T55
OPB865T55
OPB867T55
R
R
R
R
S
S
S
S
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
0.5 @ 20 mA
1.8 @ 20 mA
0.5 @ 20 mA
1.8 @ 20 mA
0.5 @ 20 mA
1.8 @ 20 mA
0.5 @ 20 mA
1.8 @ 20 mA
0.125
0.125
0.125
0.125
0.125
0.125
0.125
0.125
0.32
0.32
0.22
0.22
0.32
0.32
0.22
0.22
Reflective Object Switches with Internal Dust Covers
Mfr.Õs
Type
OPB703
OPB703W
OPB706A
Fig.
T
U
V
Output
Type
Transistor
Transistor
Transistor
Min. Output
I
C
@ I
F
(mA)
0.20 @ 40 mA
0.20 @ 40 mA
0.50 @ 20 mA
Optimum Response
Dist. (In.)
0.150
0.150
0.050
Lead Spacing
(In.)
Ñ
Wires
0.100/0.083
Infrared Photodetectors
Mfr.Õs
Type
L14C1
L14C2
L14F1
L14G1
L14G2
L14N1
L14N2
L14P1
L14P2
L14Q1
L14R1
QSB320
QSC112
QSC113
QSC114
QSC133
QSD122
QSD123
QSD124
QSD722
QSD724
QSD733
QSE113
QSE122
QSE133
QSE156
QSE157
QSE158
QSE159
QSE773
Fig.
W
W
X
X
X
W
W
X
X
C
C
Y
E
E
E
E
F
F
F
Z
Z
Z
H
H
H
AA
AA
AA
AA
BB
Output
Type
Transistor
Transistor
Darlington
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Darlington
Transistor
Transistor
Transistor
Transistor
Darlington
Transistor
Transistor
Transistor
Transistor
Transistor
Darlington
Transistor
Transistor
Darlington
Optologic
Optologic
Optologic
Optologic
PIN Photodiode
I
C
Min.
(mA)
1.00
0.50
3.00
6.00
3.00
3.00
6.00
4.00
8.00
1.00
5.00
4.00
1.00
2.40
4.00
8.00
1.00
4.00
6.00
0.60
3.50
5.00
0.25
3.00
9.00
Buffer Ñ T/P
Inverter Ñ T/P
Buffer Ñ O/C
Inverter Ñ O/C
0.03
BV ceo
(Volts)
50
50
25
45
45
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
V
CC
Ñ 4.5-16
V
CC
Ñ 4.5-16
V
CC
Ñ 4.5-16
V
CC
Ñ 4.5-16
32
Reception Angle
1
/
2
Angle (¡)
±40
±40
±10
±10
±10
±40
±40
±10
±10
±35
±35
±60
±8
±8
±8
±8
±12
±12
±12
±20
±20
±20
±25
±25
±25
±10
±10
±10
±10
±60
Infrared Emitting Diodes
Mfr.Õs
Type
1N6264
1N6265
1N6266
F5D1
F5D2
F5D3
F5E1
F5E2
F5E3
Fig.
A
B
A
A
A
A
B
B
B
Power Out
Min.
6.000 mW
6.000 mW
25.000 mW/sr
12.000 mW
9.000 mW
10.500 mW
12.000 mW
9.000 mW
10.500 mW
V
F
Max.
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
Peak Emission
Wavelength (nm)
940
940
940
880
880
880
880
880
880
Beam Angle
1
/
2
Angle (¡)
±10
±40
±10
±10
±10
±10
±40
±40
±40
Infrared Matched Emitter-Sensor Pairs
Mfr.Õs
Type
H23A1
H23LTB
H23LTI
H23LOB
QPC1213
QPD1223
QPD5223
QPE1113
QPE1259
Fig.
C
E/B
E/B
E/B
E
F
G/U
H
H/V
I
C
Min.
(mA)
1.5
Optologic Ñ Buffer T/P
Optologic Ñ Inverter O/C
Optologic Ñ Buffer O/C
5.0
10.0
7.5
0.3
Optologic Ñ Inverter O/C
Tip-Tip
Separation (In.)
0.155
0.155
0.155
0.155
0.250
0.250
0.250
0.250
0.250
550
b
ALLIED
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