EEWORLDEEWORLDEEWORLD

Part Number

Search

ST280S04P0VPDF

Description
Silicon Controlled Rectifier, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-93, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size138KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric Compare View All

ST280S04P0VPDF Overview

Silicon Controlled Rectifier, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-93, 3 PIN

ST280S04P0VPDF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-93
package instructionPOST/STUD MOUNT, O-MUPM-H3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
JEDEC-95 codeTO-209AB
JESD-30 codeO-MUPM-H3
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

ST280S04P0VPDF Preview

ST280SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 280 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with glass-metal seal
insulator
RoHS
COMPLIANT
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
TO-209AB (TO-93)
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
280 A
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
280
T
C
85
440
7850
8220
308
281
400/600
100
- 40 to 125
kA
2
s
V
µs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
600
V
RSM
, MAXIMUM NON-REPETITIVE I
DRM
/I
RRM
MAXIMUM
PEAK VOLTAGE
AT T
J
= T
J
MAXIMUM
V
mA
500
700
30
ST280S
Document Number: 94402
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST280SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 280 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
280
85
DC at 75 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
440
7850
8220
6600
Sinusoidal half wave,
initial T
J
= T
J
maximum
6900
310
220
218
200
3100
0.84
0.88
0.50
0.47
1.28
600
1000 (300)
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 880 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
1 µs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs, gate 0 V 100
Ω,
t
p
= 500 µs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/µs
mA
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94402
Revision: 11-Aug-08
ST280SPbF Series
Phase Control Thyristors
(Stud Version), 280 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
180
90
40
2.9
1.8
1.2
10
VALUES
TYP.
MAX.
UNITS
Vishay High Power Products
10.0
2.0
3.0
20
5.0
-
150
-
-
3.0
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.105
0.04
31
(275)
24.5
(210)
280
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-209AB (TO-93)
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.016
0.019
0.025
0.036
0.060
RECTANGULAR CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94402
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST280SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 280 A
Maximum Allowable Case Temperature (°C)
Maximum Allowable Cas T
e emperature (°C)
130
S 280SS
T
eries
R
thJC
(DC) = 0.105 K/ W
120
130
120
110
S 280S S
T
eries
R
thJC
(DC) = 0.105 K/ W
110
Conduc tion Angle
Conduc tion Period
100
90
30°
80
70
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
60°
90°
120°
180°
DC
100
90
30°
60°
90°
200
120°
250
80
0
50
100
150
Average On-state Current (A)
180°
300
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
350
300
250
200
150
Conduc tion Angle
180°
120°
90°
60°
30°
RMSLimit
h
R
t
0.
16
SA
K/
W
0.
25
K/
W
0.3
K/
W
0.4
K/
W
0.6
K/ W
0.8 K
/W
1.2 K
/W
0.
2
K/
W
=
1
0.
W
K/
ta
el
-D
R
100
50
0
0
50
100
150
200
250
S 280SS
T
eries
T = 125°C
J
300
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
500
450
400
350
300
250
DC
180°
120°
90°
60°
30°
h
R
t
0.
08
MS
200 R Limit
150
100
50
0
0
Conduc tion Period
K/
W
0.
16
K/
W
0. 2
K/
W
0.3
K/ W
0.4
K/ W
0.6 K
/W
0.
12
06
0.
K/
W
A
S
W
K/
=
03
0.
W
K/
-D
ta
el
R
S 280S S
T
eries
T = 125°C
J
1 K/ W
25
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94402
Revision: 11-Aug-08
ST280SPbF Series
Phase Control Thyristors
(Stud Version), 280 A
Peak Half S Wave On-state Current (A)
ine
Pea k Half S Wave On-sta te Current (A)
ine
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
10
100
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Vishay High Power Products
At Any R
ated Load Condition And With
R
ated V
RRM
Applied F
ollowing S
urge.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied F
ollowing S
urge.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
S 280SS
T
eries
S 280S S
T
eries
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
T = 25°C
J
T = 125°C
J
1000
S 280SS
T
eries
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.105 K/ W
(DC Operation)
0.1
0.01
S 280SS
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94402
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5

ST280S04P0VPDF Related Products

ST280S04P0VPDF ST280S04P1VPDF ST280S06P0VPDF ST280S06P1VPDF
Description Silicon Controlled Rectifier, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-93, 3 PIN Silicon Controlled Rectifier, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-93, 3 PIN Silicon Controlled Rectifier, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-93, 3 PIN Silicon Controlled Rectifier, TO-209AB, ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-93, 3 PIN
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker Vishay Vishay Vishay Vishay
Parts packaging code TO-93 TO-93 TO-93 TO-93
package instruction POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3 POST/STUD MOUNT, O-MUPM-H3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
JEDEC-95 code TO-209AB TO-209AB TO-209AB TO-209AB
JESD-30 code O-MUPM-H3 O-MUPM-H3 O-MUPM-H3 O-MUPM-H3
Number of terminals 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE HIGH CURRENT CABLE
Terminal location UPPER UPPER UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR SCR SCR

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 764  2438  2114  2165  1805  16  50  43  44  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号