10 Amps, 750 Volts N-CHANNEL POWER MOSFET
| 10N75 | 10N75G-TA3-T | 10N75G-TF3-T | 10N75L-TF1-T | 10N75L-TA3-T | 10N75G-TF1-T | 10N75L-TF3-T | |
|---|---|---|---|---|---|---|---|
| Description | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET | 10 Amps, 750 Volts N-CHANNEL POWER MOSFET |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to | conform to | conform to |
| Maker | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| Parts packaging code | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| package instruction | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | - | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | - | compli | compliant | compliant | compli | compliant | compliant |
| Avalanche Energy Efficiency Rating (Eas) | - | 920 mJ | 920 mJ | 920 mJ | 920 mJ | 920 mJ | 920 mJ |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | 750 V | 750 V | 750 V | 750 V | 750 V | 750 V |
| Maximum drain current (ID) | - | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A |
| Maximum drain-source on-resistance | - | 1.1 Ω | 1.1 Ω | 1.1 Ω | 1.1 Ω | 1.1 Ω | 1.1 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | - | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | - | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | - | 40 A | 40 A | 40 A | 40 A | 40 A | 40 A |
| surface mount | - | NO | NO | NO | NO | NO | NO |
| Terminal form | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Shell connection | - | - | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED |
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