UNISONIC TECHNOLOGIES CO., LTD
10N60
10 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The
UTC 10N60
is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
Power MOSFET
TO-220
1
TO-220F
FEATURES
* 10A, 600V, R
DS(ON)
=0.73Ω@V
GS
=10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
1
TO-220F1
SYMBOL
2.Drain
1
TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60L-x-TA3-T
10N60G-x-TA3-T
10N60L-x-TF1-T
10N60G-x-TF1-T
10N60L-x-TF3-T
10N60G-x-TF3-T
10N60L-x-TQ2-R
10N60G-x-TQ2-R
10N60L-x-TQ2-T
10N60G-x-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-119.E
10N60
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
Power MOSFET
RATINGS
UNIT
10N60-A
600
V
Drain-Source Voltage
V
DSS
10N60-B
650
V
Gate-Source Voltage
V
GSS
± 30
V
Avalanche Current (Note 2)
I
AR
10
A
Continuous
I
D
10
A
Drain Current
38
A
Pulsed (Note 2)
I
DM
Single Pulsed (Note 3)
E
AS
700
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
156
W
Power Dissipation
P
D
TO-220F/TO-220F1
50
W
TO-263
178
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-263
SYMBOL
θ
JA
θ
JC
RATING
62.5
0.8
2.5
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
10N60-A
10N60-B
SYMBOL
BV
DSS
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
V
V
µA
nA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V, I
D
= 250μA
600
V
GS
= 0V, I
D
= 250μA
650
Drain-Source Leakage Current
V
DS
= 600V, V
GS
= 0V
1
Forward
V
GS
= 30 V, V
DS
= 0 V
100
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
I
D
= 250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 4.75A
0.6 0.73
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1570 2040
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
166 215
Reverse Transfer Capacitance
C
RSS
18
24
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
23
55
V
DD
=300V, I
D
=10A, R
G
=25Ω
Turn-On Rise Time
t
R
69
150
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
144 300
Turn-Off Fall Time
t
F
77
165
Total Gate Charge
Q
G
44
57
V
DS
=480V, I
D
=10A, V
GS
=10 V
Gate-Source Charge
Q
GS
6.7
(Note 1, 2)
Gate-Drain Charge
Q
GD
18.5
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QW-R502-119.E
10N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
V
GS
= 0 V, I
S
= 10A,
Reverse Recovery Time
t
RR
dI
F
/ dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
1.4
10
38
420
4.2
V
A
A
ns
µC
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QW-R502-119.E
10N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-119.E
10N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-119.E
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