70N06G-T2Q-T datasheet, PDF - EEWORLD Datasheet

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70N06G-T2Q-T: Description70 Amps, 60 Volts N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size30KB，2 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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70N06G-T2Q-T Overview

70 Amps, 60 Volts N-CHANNEL POWER MOSFET

70N06G-T2Q-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	600 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	70 A
Maximum drain-source on-resistance	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	280 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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	70N06G-T2Q-T	70N06	70N06G-TQ2-T	70N06G-TA3-T	70N06L-TQ2-T	70N06L-TA3-T	70N06L-TQ2-R	70N06_09	70N06G-TQ2-R	70N06L-T2Q-T
Description	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET	70 Amps, 60 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	-	conform to	conform to
Parts packaging code	TO-262AA	-	D2PAK	TO-220AB	D2PAK	TO-220AB	D2PAK	-	D2PAK	TO-262AA
package instruction	IN-LINE, R-PSIP-T3	-	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	-	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	-	4	3	4	3	4	-	4	3
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	-	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	-	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	600 mJ	-	600 mJ	600 mJ	600 mJ	600 mJ	600 mJ	-	600 mJ	600 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	-	60 V	60 V	60 V	60 V	60 V	-	60 V	60 V
Maximum drain current (ID)	70 A	-	70 A	70 A	70 A	70 A	70 A	-	70 A	70 A
Maximum drain-source on-resistance	0.015 Ω	-	0.015 Ω	0.015 Ω	0.015 Ω	0.015 Ω	0.015 Ω	-	0.015 Ω	0.015 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	-	TO-263AB	TO-220AB	TO-263AB	TO-220AB	TO-263AB	-	TO-263AB	TO-262AA
JESD-30 code	R-PSIP-T3	-	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	-	R-PSSO-G2	R-PSIP-T3
Number of components	1	-	1	1	1	1	1	-	1	1
Number of terminals	3	-	2	3	2	3	2	-	2	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	-	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	280 A	-	280 A	280 A	280 A	280 A	280 A	-	280 A	280 A
surface mount	NO	-	YES	NO	YES	NO	YES	-	YES	NO
Terminal form	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	-	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON
Maker	-	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	-	-	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD

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