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BYD33D(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 1.3A, 200V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size62KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BYD33D(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 1.3A, 200V V(RRM), Silicon, DO-15,

BYD33D(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current20 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current1 µA
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

BYD33D(Z) Preview

BL
FEATURES
Low cos t
GALAXY ELECTRICAL
BYD33D(Z)---BYD33M(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.3 A
FAST RECOVERY RECTIFIERS
DO - 15
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYD
33D
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
BYD
33G
400
280
200
BYD
33J
600
420
600
1.3
BYD
33K
800
560
800
BYD
33M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
250
20.0
A
Maximum instantaneous forw ard voltage
(
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
1.3
1.0
100.0
300
20
120
-55 ---- + 150
- 55 ---- + 150
V
A
ns
pF
K/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0261040
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
BYD33D(Z)---BYD33M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
+0.5A
( - )
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
0
-0.25A
-1.0A
NOTE
S:1.R TIM =7ns M IN UT IM E
ISE E
AX. P
P DANCE
=1M .22pF
2.RISETIM =10ns M SOURCEIM E
E
AX.
P DANCE
=5O
SE TIM BASEFOR 50/100 ns /cm
T E
1cm
FIG.2 --FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.3 --PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
AMPERES
25
1.5
1.0
0.5
0.1
0.05
0.01
0.005
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
2
0
15
T
J
=125
8.3ms Single Half
Sine-Wave
1
0
5
1
0
20
40
60
80
100 120
140
160
180
200
1
10
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.5--TYPICAL JUNCTION CAPACITANCE
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
JUNCTION CAPACITANCE,pF
T
J
=25
Pulse W idth=300
µ
S
200
100
60
40
20
10
6
4
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
T
J
=25
f=1MHz
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE ,VOLTS
www.galaxycn.com
Document Number 0261040
BL
GALAXY ELECTRICAL
2.

BYD33D(Z) Related Products

BYD33D(Z) BYD33J(Z) BYD33K(Z) BYD33M(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 1.3A, 200V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.3A, 600V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.3A, 800V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.3A, 1000V V(RRM), Silicon, DO-15,
Is it Rohs certified? conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-15 DO-15 DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 20 A 20 A 20 A 20 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 1.3 A 1.3 A 1.3 A 1.3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 600 V 800 V 1000 V
Maximum reverse current 1 µA 1 µA 1 µA 1 µA
Maximum reverse recovery time 0.25 µs 0.25 µs 0.3 µs 0.3 µs
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL

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