BYD37M datasheet, PDF - EEWORLD Datasheet

BYD37M: DescriptionDIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size71KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BYD37M Overview

DIODE 0.6 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	HERMETIC SEALED, GLASS PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	20 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.6 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse recovery time	0.3 µs
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin (Sn)
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D121

BYD37 series

Fast soft-recovery

controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of 1996 Jun 05

1999 Nov 16

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