BYD12G datasheet, PDF - EEWORLD Datasheet

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BYD12G: DescriptionDIODE 0.82 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size49KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYD12G Overview

DIODE 0.82 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode

BYD12G Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.82 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Guideline	IEC-134
Maximum repetitive peak reverse voltage	400 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

BYD12G Preview

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D423

BYD12 series

Controlled avalanche rectifiers

Preliminary speciﬁcation

1998 Dec 03

Philips Semiconductors

Preliminary speciﬁcation

Controlled avalanche rectiﬁers

FEATURES

•

Glass passivated

•

High maximum operating

temperature

•

Low leakage current

•

Excellent stability

•

Guaranteed avalanche energy

absorption capability

•

Available in ammo-pack.

handbook, halfpage

BYD12 series

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

(1) Implotec is a trademark of Philips.

DESCRIPTION

Cavity free cylindrical glass SOD120

package through Implotec™

(1)

technology. This package is

MGL571

Fig.1 Simplified outline (SOD120) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

RRM

BYD12D

BYD12G

BYD12J

BYD12K

BYD12M

continuous reverse voltage

BYD12D

BYD12G

BYD12J

BYD12K

BYD12M

F(AV)

average forward current

amb

= 25

°C;

printed-circuit board

mounting, pitch 5 mm, see Fig.6;

averaged over any 20 ms period,

see Fig.2

t = 10 ms half sinewave;

= 25

°C

prior to surge;

= V

RRMmax

see Fig.3

−

200

400

600

800

1000

PARAMETER

repetitive peak reverse voltage

−

200

400

600

800

1000

CONDITIONS

MIN.

MAX.

UNIT

0.82 A

FSM

non-repetitive peak forward current

−

stg

storage temperature

junction temperature

−65

+175

°C

1998 Dec 03

Philips Semiconductors

Preliminary speciﬁcation

Controlled avalanche rectiﬁers

ELECTRICAL CHARACTERISTICS

= 25

°C

unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

reverse current

= 1 A; see Fig.4

= V

RRMmax

= V

RRMmax

; T

= 165

°C;

see Fig.5

THERMAL CHARACTERISTICS

SYMBOL

th j-a

Note

PARAMETER

thermal resistance from junction to ambient

note 1

CONDITIONS

BYD12 series

MAX.

1.05

100

UNIT

µA

VALUE

150

UNIT

K/W

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer

≥40 µm,

pitch 5 mm; see Fig.6.

1998 Dec 03

Philips Semiconductors

Preliminary speciﬁcation

Controlled avalanche rectiﬁers

GRAPHICAL DATA

BYD12 series

handbook, halfpage

MDA808

MGC736

IF(AV)

200

handbook, halfpage

( C)

150

(A)

0.8

0.6

100

0.4

0.2

120

160

200

Tamb (°C)

400

800

VR, V

RRM

1200

(V)

a = 1.57; V

= V

RRMmax

;

= 0.5.

Device mounted as shown in Fig.6.

Fig.2

Maximum permissible average forward

current as a function of ambient temperature

(including losses due to reverse leakage).

Solid line = V

Dotted line = V

RRM

;

= 0.5.

Fig.3

Maximum permissible junction temperature

as a function of reverse voltage.

handbook, halfpage

MDA817

handbook, halfpage

(µA)

MDA822

(A)

−1

0.5

1.5

VF (V)

−2

120

160

200

Tj (°C)

Solid line: T

= 25

°C.

Dotted line: T

= 175

°C.

= V

RRMmax

Fig.4

Forward current as a function of forward

voltage; typical values.

Fig.5

Reverse current as a function of junction

temperature; typical values.

1998 Dec 03

Philips Semiconductors

Preliminary speciﬁcation

Controlled avalanche rectiﬁers

BYD12 series

handbook, halfpage

MBK812

Dimensions in mm.

Fig.6 Device mounted on a printed-circuit board.

1998 Dec 03

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BYD12G Related Products

	BYD12G	BYD12J	BYD12M	BYD12K	BYD12D
Description	DIODE 0.82 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.82 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.82 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.82 A, 800 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.82 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode
Maker	NXP	NXP	NXP	NXP	NXP
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.82 A	0.82 A	0.82 A	0.82 A	0.82 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	IEC-134	IEC-134	IEC-134	IEC-134	IEC-134
Maximum repetitive peak reverse voltage	400 V	600 V	1000 V	800 V	200 V
surface mount	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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