BYD13DGP thru BYD13MGP
New Product
Vishay General Semiconductor
Avalanche Glass Passivated Junction Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
E
RSM
V
F
I
R
T
j
max.
1.0 A
200 V to 1000 V
30 A
7 mJ
1.1 V, 1.2 V
5.0 µA
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
DO-204AL (DO-41)
Features
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Avalanche surge capability guaranteed
Low forward voltage drop
Low leakage current, typical I
R
less than 0.1 µA
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
ply, inverters, converters and freewheeling applica-
tions for consumer, automotive and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Device Marking Code
Maximum repetitive peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length (See fig. 1)
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Non-repetitive peak reverse avalanche energy at
L = 120 mH, T
j
= T
j
max. prior to surge
Maximum full load reverse current, full cycle
average, 0.375" (9.5 mm) lead lengths at T
A
= 75 °C
Operating junction and storage temperature range
V
RRM
V
DC
I
F(AV)
I
FSM
E
RSM
I
R(AV)
T
J
, T
STG
Symbol
BYD13DGP BYD13GGP BYD13JGP BYD13KGP BYD13MGP
13DGP
200
200
13GGP
400
400
13JGP
600
600
1.0
30
7
30
- 65 to + 175
mJ
µA
°C
13KGP
800
800
13MGP
1000
1000
V
V
A
Unit
Document Number 88913
31-Aug-05
www.vishay.com
1
BYD13DGP thru BYD13MGP
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum
instantaneous
forward voltage
Maximum DC
reverse current at
rated DC blocking
voltage
Typical reverse
recovery time
Typical junction
capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Test condition
at 1.0 A
(1)
Symbol BYD13DGP BYD13GGP BYD13JGP BYD13KGP BYD13MGP
V
F
1.1
1.2
Unit
V
T
A
= 25 °C
T
A
= 125 °C
I
R
5.0
50
µA
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
t
rr
C
J
8.0
3.0
7.0
µs
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol BYD13DGP BYD13GGP BYD13JGP BYD13KGP BYD13MGP
R
θJA
55
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
Average Forward Rectified Current (A)
1.0
30
0.8
60 Hz
Resistive or
Inductive Load
Peak Forward Surge Current (A)
BYD13DGP -- BYD13MGP
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
25
0.6
20
BYD13DGP -- BYD13MGP
0.4
15
0.2
0.375" (9.5mm) Lead Length
0
20
40
60
80
100
120
140
160
180
10
5.0
1
10
100
Ambient Temperature, °C
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88913
31-Aug-05
BYD13DGP thru BYD13MGP
Vishay General Semiconductor
30
Instantaneous Forward Current (A)
10
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
BYD13DGP........200V
1
BYD13GGP........400V
BYD13JGP........ 600V
0.1
BYD13D to BYD13J
BYD13K to BYD13M
0.01
0.6
0.8
1.0
1.2
1.4
1.6
BYD13KGP........800V
BYD13MGP.....1000V
Instantaneous Forward
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Maximum Repetitive Peak Reverse Voltage, V
RRM
10
20
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
10
Instantaneous Reverse Current (µA)
1
T
J
= 125 °C
0.1
T
J
= 75 °C
0.01
T
J
= 25 °C
Junction Capacitance (pF)
BYD13DGP to BYD13JGP
BYD13KGP to BYD13MGP
0.001
0
20
40
60
80
100
1.0
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
Reverse
Voltage
(V)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Junction Capacitance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
for suffix “E” part numbers
0.023 (0.58)
Document Number 88913
31-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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