BY8408 datasheet, PDF - EEWORLD Datasheet

BY8408: DescriptionDIODE 0.005 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size67KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BY8408 Overview

DIODE 0.005 A, 10000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	E-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	35 V
JESD-30 code	E-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	120 °C
Maximum output current	0.005 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	10000 V
Maximum reverse recovery time	0.1 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D117

BY8400 series

Fast high-voltage soft-recovery

rectifiers

Product speciﬁcation

Supersedes data of June 1994

1996 May 24

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