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BAS70A-AE3-R

Description
0.07 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size135KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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BAS70A-AE3-R Overview

0.07 A, 70 V, SILICON, SIGNAL DIODE

BAS70A-AE3-R Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionLEAD FREE, ULTRA SMALL, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.0700 A
UNISONIC TECHNOLOGIES CO., LTD
BAS70x
SCHOTTKY BARRIER
DIODES
DESCRIPTION
Planar Schottky barrier diodes encapsulated in the SOT-23
small plastic SMD package. Single diodes and dual diodes
with different pin configuration are available.
DIODE
FEATURES
*·Low Turn-on voltage
* Fast switching
*·Ultra-small surface mount package
*·Also available in lead free version
*Pb-free plating product number: BAS70xL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BAS70-AE3-R
BAS70L-AE3-R
BAS70A-AE3-R
BAS70AL-AE3-R
BAS70C-AE3-R
BAS70CL-AE3-R
BAS70S-AE3-R
BAS70SL-AE3-R
Package
SOT-23
SOT-23
SOT-23
SOT-23
Pin Assignment
1
2
3
x
A
K
K1
K2
A2A1
A1
A2
K2K1
K1
A2
K2A1
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: A: Anode K: Cathode x:NC
BAS70L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 3
QW-R601-017,B

BAS70A-AE3-R Related Products

BAS70A-AE3-R BAS70SL-AE3-R BAS70X_08 BAS70C-AE3-R BAS70L-AE3-R BAS70-AE3-R BAS70AL-AE3-R BAS70CL-AE3-R BAS70X BAS70S-AE3-R
Description 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3 3 3 3 3 3 3
Number of components 1 1 1 1 1 1 1 1 1 1
surface mount Yes YES Yes Yes YES Yes YES YES Yes YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type SIGNAL DIODE RECTIFIER DIODE SIGNAL DIODE SIGNAL DIODE RECTIFIER DIODE SIGNAL DIODE RECTIFIER DIODE RECTIFIER DIODE SIGNAL DIODE RECTIFIER DIODE
Maximum reverse recovery time 0.0050 us 0.005 µs 0.0050 us 0.0050 us 0.005 µs 0.0050 us 0.005 µs 0.005 µs 0.0050 us 0.005 µs
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V 70 V 70 V 70 V 70 V 70 V 70 V

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