UNISONIC TECHNOLOGIES CO., LTD
BAT54x
SCHOTTKY BARRIER (DUAL)
DIODES
DESCRIPTION
Planar Schottky barrier diodes encapsulated in the SOT-23,
SOT-323 and SOD-323 small plastic SMD package. Single diodes and
dual diodes with different pin configuration are available.
DIODE
FEATURES
* Low forward voltage
* Guard ring protected
* Small plastic SMD package
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BAT54L-AE3-R
BAT54G-AE3-R
BAT54AL-AE3-R
BAT54AG-AE3-R
BAT54CL-AE3-R
BAT54CG-AE3-R
BAT54SL-AE3-R
BAT54SG-AE3-R
BAT54L-CB2-R
BAT54G-CB2-R
BAT54L-AL3-R
BAT54G-AL3-R
BAT54AL-AL3-R
BAT54AG-AL3-R
BAT54CL-AL3-R
BAT54CG-AL3-R
BAT54SL-AL3-R
BAT54SG-AL3-R
Note: Pin Assignment: A: Anode K: Cathode x:NC
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOD-323
SOT-323
SOT-323
SOT-323
SOT-323
Pin Assignment
1
2
3
x
A
K
K1
K2
A2A1
A1
A2
K2K1
K1
A2
K2A1
A
K
-
x
A
K
K1
K2
A2A1
A1
A2
K2K1
K1
A2
K2A1
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Tape Reel
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QW-R601-007,F
BAT54x
DIODE CONFIGURATION AND SYMBOL
BAT54
3
2
1
n.c
DIODE
BAT54A
BAT54C
BAT54S
MARKING
BAT54
BAT54A
BAT54C
BAT54S
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QW-R601-007,F
BAT54x
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
DIODE
UNIT
Per diode
Continuous Reverse Voltage
V
R
30
V
Continuous Forward Current
I
F
200
mA
Repetitive Peak Forward Current (t
p
<1s,
δ≤0.5)
I
FRM
300
mA
Non-repetitive Peak Forward Current (t
p
<10ms)
I
FSM
600
mA
Junction Temperature
T
J
+125
°C
Storage Temperature
T
STG
-60 ~ +150
°C
Per device
Power Dissipation (Ta≤25°C)
P
D
230
mW
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
SOT-23
SOT-323
SYMBOL
θ
JA
RATINGS
500
625
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Ta = 25°C,
unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
When switched from I
F
=10mA
to I
R
= 10mA, R
L
= 100Ω
measured at I
R
= 1mA
f = 1 MHz, V
R
= 1V;
MIN
TYP
MAX UNIT
240
mV
320
mV
400
500
800
2
5
10
mV
mV
mV
μA
ns
pF
Forward Voltage (See Fig.1)
V
F
Reverse Current (See Fig.2)
Reverse Recovery Time (see Fig.4)
Diode Capacitance (see Fig.3)
I
R
t
rr
C
d
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QW-R601-007,F
BAT54x
TYPICAL CHARACTERISTICS
DIODE
I
F
(mA)
Fig.3 Diode capacitance as a function of
reverse voltage; typical values.
10
3
T
a
= 25°C, f = 1 MHz
I
R
(μA)
Fig.4 Reverse recovery definitions
I
F
dI
F
dt
10
C
d
(pF)
10% t
5
Q
r
90%
I
R
t
F
0
0
10
V
R
(V)
20
30
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-007,F
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