UNISONIC TECHNOLOGIES CO., LTD
BC817
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC
BC817
is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2A.
NPN SILICON TRANSISTOR
Lead-free:
BC817L
Halogen-free:BC817G
ORDERING INFORMATION
Normal
BC817-x-AE3-R
BC817-x-AL3-R
Ordering Number
Lead Free
BC817L-x-AE3-R
BC817L-x-AL3-R
Halogen Free
BC817G-x-AE3-R
BC817G-x-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
BC817L-x-AE3-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(2) AE3: SOT-23, AL3: SOT-323
(3) x: refer to Classification of h
FE
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
MARKING
BC817-16
BC817-25
BC817-40
6A
L: Lead Free
G: Halogen Free
6B
L: Lead Free
G: Halogen Free
6C
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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BC817
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
SYMBOL
V
CES
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified)
RATINGS
UNIT
50
V
45
V
5.0
V
1.5
A
SOT-23
310
mW
Collector Dissipation
P
C
SOT-323
200
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-OFF Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
h
FE1
h
FE2
V
CE(SAT)
V
BE(ON)
I
C
=100mA,V
CE
=1.0V
I
C
=500mA, V
CE
=1.0V
I
C
=500mA,I
B
=50mA
I
C
=500mA, V
CE
=1.0V
See Classification
40
0.7
1.2
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
TEST CONDITIONS
I
C
=10mA, I
B
=0
I
C
=100μA,I
E
=0
I
E
=10μA, Ic=0
V
CB
=20V
V
CB
=20V,Ta=150°C
MIN TYP MAX UNIT
45
50
5
100
5
V
V
V
nA
μA
V
V
CLASSIFICATION OF h
FE1
RANK
RANGE
16
100-250
25
160-400
40
250-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-025.E
BC817
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Base-Emitter On Voltage, V
BE(ON)
(V)
Base-Emitter Voltage, V
BE(SAT)
(V)
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BC817
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
Gain Bandwidth Pro Duct, h
FE
(MHz)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power Dissipation, P
D
(mW)
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QW-R206-025.E
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