DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D373
BGY241
UHF amplifier module
Product specification
Supersedes data of 1999 May 01
1999 Sep 09
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES
•
3.5 V nominal supply voltage
•
35 dBm output power
•
Easy output power control by DC voltage.
APPLICATIONS
•
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY241 is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover.
The module consists of one NPN silicon planar transistor
die and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
PINNING - SOT482C
PIN
1
2
3
4
5
RF input
V
C
V
S
RF output
ground
BGY241
DESCRIPTION
handbook, halfpage
5
4
3
2
1
MBK201
Bottom view
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
MODE OF
OPERATION
Pulsed;
δ
= 1 : 8
f
(MHz)
880 to 915
V
S
(V)
3.5
V
C
(V)
≤2.2
P
L
(dBm)
35.2
G
p
(dB)
≥35.2
η
(%)
typ. 43
Z
S
; Z
L
(Ω)
50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S
V
C
P
D
P
L
T
stg
T
mb
PARAMETER
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
CONDITIONS
V
C
= 0; P
D
= 0 mW
V
C
≥
0.2 V
−
−
−
−
−
−40
−30
MIN.
7
5.5
2.7
10
36
+100
+100
MAX.
UNIT
V
V
V
dBm
dBm
°C
°C
1999 Sep 09
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
CHARACTERISTICS
Z
S
= Z
L
= 50
Ω;
P
D
= 0 dBm; V
S
= 3.5 V; V
C
≤
2.2 V; f = 880 to 915 MHz; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs;
unless otherwise specified.
SYMBOL
I
Q
I
CM
P
L
PARAMETER
leakage current
peak control current
load power
CONDITIONS
V
C
= 0.2 V; P
D
= 0 mW
V
S
= 7 V; V
C
= 0; P
D
= 0 mW
P
L
= 35.2 dBm
V
C
= 2.2 V
V
S
= 3 V; V
C
= 2.2 V;
T
mb
=
−20
to +85
°C
G
p
η
H
2
H
3
VSWR
in
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
P
L
= 35.2 dBm
P
L
= 34 dBm
P
L
= 35.2 dBm
P
L
= 35.2 dBm
P
L
= 5 to 35 dBm
V
S
= 3 to 5 V; P
D
=
−3
to +3 dBm;
V
C
= 0 to 2.2 V; P
L
≤
35.2 dBm;
VSWR
≤
6 : 1 through all phases
V
C
= 0.5 V; P
D
= 3 dBm
P
L
=
−5
to +5 dBm
P
L
= 5 to 35.2 dBm;
bandwidth = 100 kHz;
20 MHz above transmitter band
P
D
= 3% AM; f = 100 kHz;
P
L
= 5 to 35.2 dBm
P
D
=
−0.5
to +0.5 dBm;
P
L
= 5 to 35.2 dBm
P
L
= 35.2 dBm; f = 915 MHz;
P
L
(925 MHz)/P
D
(905 MHz)
MIN.
−
−
−
35.2
33.6
−
35
−
−
−
−
TYP.
−
6
−
35.5
−
35.2
42
−50
−53
−
−
MAX.
10
20
3
−
−
−
−
−38
−40
3:1
−60
dBc
UNIT
µA
mA
mA
dBm
dBm
dB
%
dBc
dBc
isolation
control bandwidth
control slope
P
n
noise power
−
1.5
−
−
−43
−
240
−76
−37
−
−
−75
dBm
MHz
dB/V
dBm
AM/AM conversion
AM/PM conversion
T
X
/R
X
conversion
t
r
t
f
carrier rise time
carrier fall time
ruggedness
−
−
−
12
−
25
1.5
1.5
14
2
30
2
2
%
deg
dB
µs
µs
P
L
= 6 to 34 dBm; time to settle within
−
−0.5
dB of final P
L
P
L
= 6 to 34 dBm; time to settle within
−
−0.5
dB of final P
L
V
S
= 5 V; P
L
= 34.8 dBm;
VSWR
≤
12 : 1 through all phases
V
S
= 4.5 V; V
C
= 2.3 V;
VSWR
≤
5 : 1 through all phases
no degradation
no degradation
1999 Sep 09
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, halfpage
4
MGS648
MGS649
PL
(W)
3
880 MHz
915 MHz
handbook, halfpage
8
PL
(W)
6
880 MHz
915 MHz
2
4
1
2
0
1
1.5
2
VC (V)
2.5
0
2
3
4
5
VS (V)
6
Z
S
= Z
L
= 50
Ω;
V
S
= 3.5 V; P
D
= 1 mW;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Z
S
= Z
L
= 50
Ω;
V
C
= 2.2 V; P
D
= 1 mW;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Fig.2
Load power as a function of control voltage;
typical values.
Fig.3
Load power as a function of supply voltage;
typical values.
MGS650
MGS651
50
handbook, halfpage
η
(%)
40
915 MHz
880 MHz
handbook, halfpage
5
PL
(W)
4
30
3
20
2
10
1
0
0
1
2
3
4
PL (W)
5
0
880
890
900
910
f (MHz)
920
Z
S
= Z
L
= 50
Ω;
V
S
= 3.5 V; P
D
= 1 mW;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Z
S
= Z
L
= 50
Ω;
V
S
= 3.5 V; P
D
= 1 mW; V
C
= 2.2 V;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Fig.4
Efficiency as a function of load power;
typical values.
Fig.5
Load power as a function of frequency;
typical values.
1999 Sep 09
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
MGS652
handbook, halfpage
4
MGS653
handbook, halfpage
0
H2, H3
VSWRin
(dBc)
−20
3
−40
H3
880 MHz
915 MHz
1
0
1
2
3
PL (W)
4
−80
880
−60
H2
2
890
900
910
f (MHz)
920
Z
S
= Z
L
= 50
Ω;
V
S
= 3.5 V; P
D
= 1 mW;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs
Z
S
= Z
L
= 50
Ω;
V
S
= 3.5 V; P
D
= 1 mW; P
L
= 2.5 W;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Fig.6
Input VSWR as a function of load power;
typical values.
Fig.7
Harmonics as a function of frequency;
typical values.
MGS654
handbook, halfpage
5
PL
(W)
4
(1)
(2)
12
handbook, halfpage
output
AM
(%) 10
MGS655
880 MHz
915 MHz
8
3
(3)
(4)
6
2
4
1
2
0
0
20
40
60
80
100
Tmb (
°
C)
0
0
10
20
30
PL (dBm)
40
Z
S
= Z
L
= 50
Ω;
P
D
= 1 mW; V
C
= 2.2 V;
δ
= 1 : 8; t
p
= 575
µs.
(1) V
S
= 3.5 V; f = 880 MHz.
(2) V
S
= 3.5 V; f = 915 MHz.
(3) V
S
= 3.1 V; f = 880 MHz.
(4) V
S
= 3.1 V; f = 915 MHz.
Z
S
= Z
L
= 50
Ω;
V
S
= 3.5 V; P
D
= 1 mW; T
mb
= 25
°C;
∆f
= 100 kHz; input amplitude modulation = 3%;
δ
= 1 : 8; t
p
= 575
µs.
Fig.8
Load power as a function of mounting base
temperature; typical values.
Fig.9
Output amplitude modulation as a function
of load power; typical values.
1999 Sep 09
5
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