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BUK7607-30B_15

Description
N-channel TrenchMOS standard level FET
File Size187KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7607-30B_15 Overview

N-channel TrenchMOS standard level FET

D2
PA
K
BUK7607-30B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min
-
-
-
-
Typ
-
-
-
5.9
Max Unit
30
75
157
7
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 75 A; V
sup
30 V;
drain-source avalanche R
GS
= 50
Ω;
V
GS
= 10 V;
energy
T
j(init)
= 25 °C; unclamped
gate-drain charge
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 24 V; T
j
= 25 °C;
see
Figure 13
-
-
329
mJ
Dynamic characteristics
Q
GD
-
12
-
nC
[1]
Continuous current is limited by package.

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