DISCRETE SEMICONDUCTORS
DATA SHEET
BT134W series
Triacs
Product
specification
September 1997
1;3
Semiconductors
Product specification
Triacs
BT134W series
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope suitable for surface
mounting, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT134W-
BT134W-
BT134W-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500F
500G
500
1
10
600
600F
600G
600
1
10
800
800F
800G
800
1
10
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
4
SYMBOL
T2
main terminal 2
gate
main terminal 2
1
2
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
sp
≤
108 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/μs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
1
10
11
0.5
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/μs
A/μs
A/μs
A/μs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
September 1997
1
Rev 1.200
1;3
SemiconductorV
Product specification
Triacs
BT134W series
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
MIN.
-
-
-
TYP.
-
156
70
MAX.
15
-
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
BT134W-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 2 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
MIN.
TYP.
...
-
-
-
-
-
-
-
-
-
-
-
0.25
-
5
8
11
30
7
16
5
7
5
1.2
0.7
0.4
0.1
35
35
35
70
20
30
20
30
15
MAX.
...F
25
25
25
70
20
30
20
30
15
1.50
1.5
-
0.5
...G
50
50
50
100
30
45
30
45
30
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
BT134W-
V
DM
=67% V
DRM(max)
;
T
j
= 125 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 ˚C;
I
T(RMS)
= 1 A;
dI
com
/dt = 1.8 A/ms; gate
open circuit
I
TM
= 1.5 A;
V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs;
...
100
MIN.
...F
50
...G
200
TYP.
250
MAX.
-
UNIT
V/μs
dV
com
/dt
-
-
10
50
-
V/μs
t
gt
-
-
-
2
-
μs
September 1997
2
Rev 1.200
1;3
SemiconductorV
Product specification
Triacs
BT134W series
1.4
1.2
Ptot / W
BT134W
Tsp(max) / C
104
107
1.2
1
0.8
IT(RMS) / A
BT134W
108 C
= 180
1
1
0.8
0.6
0.4
0.2
0
120
90
60
30
110
113
0.6
116
119
122
125
1.2
0.4
0.2
0
-50
0
0.2
0.4
0.6
0.8
IT(RMS) / A
1
0
50
Tsp / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
BT134W
IT
T
100
dI
T
/dt limit
I TSM
time
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus solder point temperature T
sp
.
IT(RMS) / A
BT134W
1000
ITSM / A
2
1.5
Tj initial = 25 C max
1
T2- G+ quadrant
10
0.5
1
10us
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT134W
IT
T
8
6
4
2
0
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
sp
≤
108˚C.
VGT(Tj)
VGT(25 C)
12
10
1.6
1.4
1.2
1
0.8
0.6
BT136
Tj initial = 25 C max
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
September 1997
3
Rev 1.200
1;3
SemiconductorV
Product specification
Triacs
BT134W series
3
2.5
2
1.5
1
IGT(Tj)
IGT(25 C)
BT136
T2+ G+
T2+ G-
T2- G-
T2- G+
2
IT / A
Tj = 125 C
Tj = 25 C
BT134W
1.5
Vo = 1.0 V
Rs = 0.21 Ohms
typ
1
max
0.5
0.5
0
-50
0
0
50
Tj / C
100
150
0
0.5
1
VT / V
1.5
2
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
0.5
TRIAC
100
Zth j-sp (K/W)
BT134W
10
unidirectional
1
bidirectional
P
D
tp
0.1
t
0
-50
0
50
Tj / C
100
150
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-sp
, versus
pulse width t
p
.
dVcom/dt (V/us)
off-state dV/dt limit
BT134...G SERIES
BT134 SERIES
3
2.5
2
1.5
1
0.5
TRIAC
1000
100
BT134...F SERIES
10
dIcom/dt = 5.1
A/ms
3.9
50
3
2.3
1.8
100
1.4
150
0
-50
0
50
Tj / C
100
150
1
0
Tj / C
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
September 1997
4
Rev 1.200
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