UNISONIC TECHNOLOGIES CO., LTD
BT151
SCRS
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage capability
and high thermal cycling performance. Typical applications include
motor control, industrial and domestic lighting, heating and static
switching.
SCR
1
TO-220
SYMBOL
1
TO-252
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
BT151L-5-TA3-T
BT151G-5-TA3-T
BT151L-5-TN3-R
BT151G-5-TN3-R
BT151L-6-TA3-T
BT151G-6-TA3-T
BT151L-6-TN3-R
BT151G-6-TN3-R
BT151L-8-TA3-T
BT151G-8-TA3-T
BT151L-8-TN3-R
BT151G-8-TN3-R
Note: Pin assignment: K: CATHODE
A: ANODE
Package
TO-220
TO-252
TO-220
TO-252
TO-220
TO-252
G: GATE
Pin Assignment
1
2
3
K
A
G
K
A
G
K
A
G
K
A
G
K
A
G
K
A
G
Packing
Tube
Tape Reel
Tube
Tape Reel
Tube
Tape Reel
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Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R301-017,C
BT151
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
500 (Note 1)
650 (Note 1)
800
7.5
12
100
110
50
SCR
UNIT
BT151-5
V
Repetitive Peak Off-State Voltages
V
DRM,
V
RRM
BT151-6
BT151-8
Average On-State Current (half sine wave; Tmb
≤109°C)
I
T(AV)
A
RMS on-State Current (all conduction angles)
I
T(RMS)
A
Non-Repetitive Peak On-State Current
t = 10 ms
A
I
TSM
(half sine wave; T
J
= 25 °C prior to surge) t = 8.3 ms
I
2
t for Fusing (t = 10 ms)
I
2
t
A
2
s
Repetitive Rate of Rise of On-State Current After Triggering
d
IT
/dt
50
A/μs
(I
TM
= 20 A; I
G
= 50 mA; dI
G
/dt = 50 mA/μs)
Peak Gate Current
I
GM
2
A
Peak Gate Voltage
V
GM
5
V
Peak Reverse Gate Voltage
V
RGM
5
V
Peak Gate Power
P
GM
5
W
Average Gate Power (Over any 20 ms period)
P
G(AV)
0.5
W
Storage Temperature
T
stg
-40 ~150
°C
Operating Junction Temperature
T
J
125
°C
Note: 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor
may switch to the on-state. The rate of rise of current should not exceed 15A/μs.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Mounting Base
Junction to Ambient
SYMBOL
θ
JMb
θ
JA
RATINGS
1.3
60
UNIT
K/W
K/W
STATIC CHARACTERISTICS
(T
J
=25℃,unless otherwise stated)
PARAMETER
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
, I
R
CONDITIONS
V
D
= 12 V, I
T
= 0.1 A
V
D
= 12 V, I
GT
= 0.1 A
V
D
= 12 V, I
GT
= 0.1 A
I
T
= 23 A
V
D
= 12 V, I
T
= 0.1 A
V
D
= V
DRM(max)
, I
T
= 0.1 A, T
J
= 125 °C
V
D
= V
DRM(max)
, V
R
= V
RRM(max)
,T
J
= 125°C
MIN
TYP
2
10
7
1.4
0.6
0.4
0.1
MAX
15
40
20
1.75
1.5
0.5
UNIT
mA
mA
mA
V
V
mA
0.25
DYNAMIC CHARACTERISTICS
(T
J
=25℃,unless otherwise stated)
PARAMETER
Critical Rate of Rise of
Off-State Voltage
Gate Controlled Turn-on
Time
Circuit Commutated
Turn-off tIme
SYMBOL
CONDITIONS
V
DM
= 67% V
DRM(max)
,
Gate open circuit
dV
D
/dt T
J
= 125 °C,
exponential waveform; R
GK
= 100Ω
I
TM
= 40 A, V
D
= V
DRM(max)
, I
G
= 0.1 A,
t
GT
dI
G
/dt = 5 A/μs
V
D
= 67% V
DRM(max)
, T
J
= 125°C;
t
Q
I
TM
= 20 A, V
R
= 25 V, dI
TM
/dt = 30 A/μs,
dV
D
/dt = 50 V/μs, R
GK
= 100
Ω
MIN
50
200
TYP
130
1000
2
70
MAX UNIT
V/μs
μs
μs
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QW-R301-017,C
BT151
TYPICAL CHARACTERISTICS
Fig 1. Maximum On-State Dissipation,
p
tot
, Versus Average On-State Current,
I
T(AV)
, Where a=form factor=I
T(RMS)
/I
T(AV)
Conduction form
angle
factor
degrees
a
4
30
2.8
60
10
2.2
90
1.9
120
1.57
180
SCR
15
Ptot/W
Fig 2. Maximum Permissible Non-Repetitive Peak
On-State Current ITSM,Versus Pulse Width tp
,
for
Sinusoidal Currents, tp
≤
10ms
Tmb(max)/°C
ITSM/A
105.5 1000
1.9
α=1.57
112
100
I
T
118.5
α
T
2.2
2.8
4
dIT/dt limit
I
TSM
time
100µs
T/s
1ms
10ms
5
0
0
1
2
3
4 5
IT(AV)/A
6
7 8
125
T
J
initial=25°C max
10
10µs
Fig 3. Maximum Permissible Rms Current
lT(RMS), Versus Mounting Base
Temperature Tmb
IT(RMS)/A
15
109
°
C
10
Fig 4. Maximum Permissible Non-Repetitive
Peak On-State Current I
TSM
,Versus Number Of
Cycles,For Sinusoidal Currents, f=50HZ
ITSM/A
120
I
TSM
I
T
100
T
time
80
T
J
initial=25°C max
60
5
40
20
0
-50
0
50
100
Tmb/
°
C
150
0
1
10
100
1000
Number Of Half Cycles At 50Hz
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TYPICAL CHARACTERISTICS
(Cont.)
Fig 7. Normalised Gate Trigger Current I
GT
(T
J
)/
I
GT
(25
°
C), Versus Junction Temperature T
J
I
GT
(T
J
)
I (25
°
C)
3
GT
2.5
2
1.5
1
0.5
0
-50
0
50
T
J
/
°
C
100
150
Fig 8. Normalised Latching Current
I
L
(T
J
)/I
L
(25
°
C),
Versus Junction Temperature T
J
I
L
(T
J
)
I
L
(25
°
C)
3
2.5
2
1.5
1
0.5
0
-50
0
50
T
J
/
°
C
100
150
SCR
Fig 9. Normalised Holding Current I
H
(T
J
)/I
H
(25
Versus Junction Temperature T
J
3
I
H
(T
J
)
I
H
(25
°C
)
),
Fig 10. Typical and Maximum On-State
Characteristic
30 I
T
/A
T
J
=125
°C
25 T
J
=25
°C
20
15
10
5
typ
max
2.5
2
1.5
1
0.5
0
-50
0
50
T
J
/
°
C
100
150
0
0
0.5
1
VT/V
1.5
2
Fig 11.Transient Thermal Impedance Zthj-mb,
Versus Pulse Width tp
Zth j-mb(K/W)
10
1
0.1
PD
0.01
t
0.001
10us 0.1ms 1ms 10ms 0.1s 1s
10s
Fig 12. Typical, Critical Rate Of Rise
Of Off-State Voltage, dV
D
/dt Versus
Junction Temperature T
J
dVD/dt(V/µs)
10000
1000
R
GK
=100Ω
tp
100
gate open circuit
10
0
50
T
J
/°C
100
150
tp/s
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QW-R301-017,C
BT151
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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