UNISONIC TECHNOLOGIES CO., LTD
BT169
SCRS
DESCRIPTION
Passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced
directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
SCR
SYMBOL
Lead-free:
BT169xL
Halogen-free: BT169xG
ORDERING INFORMATION
Normal
BT169B-T92-B
BT169B-T92-K
BT169D-T92-B
BT169D-T92-K
BT169E-T92-B
BT169E-T92-K
BT169G-T92-B
BT169G -T92-K
BT169H-T92-B
BT169H -T92-K
Note: Pin Assignment:
Ordering Number
Lead Free
Halogen Free
BT169BL-T92-B
BT169BG-T92-B
BT169BL-T92-K
BT169BG-T92-K
BT169DL-T92-B
BT169DG-T92-B
BT169DL-T92-K
BT169DG-T92-K
BT169EL-T92-B
BT169EG-T92-B
BT169EL-T92-K
BT169EG-T92-K
BT169GL-T92-B
BT169GP-T92-B
BT169GL-T92-K
BT169GP-T92-K
BT169HL-T92-B
BT169HG-T92-B
BT169HL-T92-K
BT169HG-T92-K
C:CATHODE G:GATE A:ANODE
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
K
G
A
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
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Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R301-015,C
BT169
QUICK REFERENCE DATA
PARAMETER
Repetitive Peak Off-State Voltages
Average On-State Current
RMS On-State Current
Non-Repetitive Peak On-State Current
SYMBOL
V
DRM
, V
RRM
I
T(AV)
I
T(RMS)
I
TSM
BT169B BT169D BT169E BT169G BT169H
MAX
MAX
MAX
MAX
MAX
200
400
500
600
800
0.5
0.5
0.5
0.5
0.5
0.8
0.8
0.8
0.8
0.8
8
8
8
8
8
SCR
UNIT
MAX
V
A
A
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
BT169B
BT169D
Repetitive Peak Off-State Voltages(Note 2) BT169E
V
DRM
,V
RRM
V
BT169G
BT169H
Peak Gate Voltage
V
GM
V
Peak Reverse Gate Voltage
V
RGM
V
Peak Gate Current
I
GM
A
Average On-State Current
I
T(AV)
0.5
A
(Half Sine Wave, T
LEAD
≦
83
°C)
RMS On-State Current (All Conduction Angles)
I
T(RMS)
0.8
A
Non-Repetitive Peak On-State Current
t=10ms
8
A
I
TSM
(Half Sine Wave, T
J
=25°C Prior to Surge) t=8.3ms
9
A
2
2
I t For Fusing (t=10ms)
It
0.32
A
2
S
Repetitive Rate of Rise of On-State Current After
dI
T
/dt
50
A/μs
Triggering (I
TM
=2A,I
G
=10mA, dI
G
/dt=100mA/μs)
Peak Gate Power
P
GM
2
W
Average Gate Power (Over any 20 ms period)
P
G(AV)
0.1
W
Junction Temperature
T
J
+125
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
RATINGS
200
400
500
600
800
5
5
1
UNIT
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient (typ.)
Note: pcb mounted, lead length=4mm
SYMBOL
θ
JA
RATINGS
150
UNIT
°C
/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
SYMBOL
I
GT
I
L
I
H
V
T
V
GT
I
D
,I
R
TSET CONDITIONS
V
D
=12V, I
T
=10 mA, gate open circuit
V
D
=12V, I
GT
=0.5mA, R
GK
=1kΩ
V
D
=12V,I
GT
=0.5mA, R
GK
=1kΩ
I
T
=1A
V
D
=12V, I
T
=10mA, gate open circuit
V
D
=V
DRM(MAX)
, I
T
=10mA, T
J
=125°C,
gate open circuit
V
D
=V
DRM(MAX)
, V
R
=V
RRM(MA\X)
,
T
J
=125°C, R
GK
=1kΩ
MIN
25
2
2
1.2
0.2
0.5
0.3
0.05
TYP
MAX
55
6
5
1.35
0.8
0.1
UNIT
μA
mA
mA
V
V
mA
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2 of 6
QW-R301-015,C
BT169
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
DYNAMIC CHARACTERISTICS
Ciritical Rate of Rise of Off-State
Voltage
Gate Controlled Turn-On Time
Circuit Commutated Turn-Off
Time
SYMBOL
dV
D
/dt
t
gt
tq
TSET CONDITIONS
V
DM
=67% V
DRM(MAX)
, T
J
=125°C,
exponential waveform, R
GK
=1kΩ
I
TM
=2A,V
D
=V
DRM(MAX)
, I
G
=10mA,
dIG/dt=0.1A/μs
V
D
=67% V
DRM(MAX)
, T
J
=125°C,
I
TM
=1.6A,V
R
=35V, d
ITM
/dt=30A/μs,
V
D
/dt=2V/μs, R
GK
=1kΩ
MIN
500
TYP
800
2
100
MAX
SCR
UNIT
V/μs
μs
μs
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3 of 6
QW-R301-015,C
BT169
Maximum Permissible RMS Current,
I
T(RMS)
Maximum Permissible Non-Repetitive
Peak On-State Current, I
TSM
(A)
Maximum On-State Dissipation, P
D
(W)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Tc
(MAX)
(C)
Maximum Permissible Repetitive RMS
On-State Current, I
T(RMS)
(A)
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Maximnum Permissible Non-Repetitive Peak
On-State Current, I
TSM
(A)
Normalised Gate Trigger Voltage
V
GT
(T
J
)
V
GT
(25°C)
4 of 6
QW-R301-015,C
SCR
BT169
TYPICAL CHARACTERISTICS(Cont.)
Normalised Gate Trigger Current vs. Junction
Temperature
Normalised Gate Trigger Current
I
GT
(T
J
)
V
GT
(25°C)
3.0
2.5
2.0
I
T
(A)
1.5
1.0
0.5
0
-50
5
4
3
2
1
0
0
50
100
150
0
0.5
1.0
1.5
V
T
(V)
2.0
T
J
=125°C - - -
T
J
= 25°C
SCR
Typical And Maximum On-State Characteristic
V
OUT
=1.067V
Rs=0.187
typ
max
2.5
Junction Temperature, T
J
(°C)
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Typical, Critical Rate Of Rise Of Off-State
Voltage, dV
D
/dt(V/us)
Normalised Holding Current
I
H
(T
J
)
I
H
(25°C)
Transient Thermal Impedance,
θ
J-LEAD
(°C/W)
Normalised Latching Current
I
L
(T
J
)
I
L
(25°C)
5 of 6
QW-R301-015,C
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