UNISONIC TECHNOLOGIES CO., LTD
BU407
NPN EXPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC
BU407
is a NPN epitaxial planar transistor,
designed for use in TV Horizontal output and switching
applications.
1
NPN SILICON TRANSISTOR
FEATURES
* High breakdown voltage
TO-220
Lead-free:
BU407L
Halogen-free: BU407G
ORDERING INFORMATION
Normal
BU407-x-TA3-T
Ordering Number
Lead Free Plating
BU407L-x-TA3-T
Halogen Free
BU407G-x-TA3-T
Package
TO-220
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R203-020.B
BU407
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
a
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
V
CBO
330
V
Collector to Emitter Voltage
V
CEO
150
V
Emitter to Base Voltage
V
EBO
6
V
Collector Current
I
C
7
A
Base Current
I
B
4
A
Collector Dissipation (T
a
=25°С)
P
C
60
W
Junction Temperature
T
J
150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
MIN
TYP
MAX
70
2.08
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS
(T
a
=25°С, unless otherwise specified)
PARAMETER
Collector Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collect Cutoff Current’
Emitter Cutoff Current
DC Current Gain
Current Gain Bandwidth Product
SYMBOL
BV
CEO
V
CE(SAT)
V
BE(SAT)
I
CES
I
EBO
h
FE1
h
FE2
h
FE3
f
T
TEST CONDITIONS
I
C
=100 mA, I
B
= 0
I
C
= 5 A, I
B
= 0.5 A
V
CE
=400 V
V
BE
= 6 V, I
C
= 0
I
C
= 500 mA, V
CE
= 5 V
I
C
= 2 A, V
CE
= 5 V
I
C
= 5 A, V
CE
= 5 V
I
C
= 500 mA, V
CE
= 10 V, f =1 MHz
MIN
150
TYP
MAX UNIT
V
1
V
1.2
V
5
mA
1
mA
200
MH
Z
25
35
10
10
CLASSIFICATION OF h
FE2
RANK
RANGE
B
35-85
C
75-125
D
115-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-020.B
BU407
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Emitter Current,I
E
(µA)
Collector Current,I
C
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current,I
C
(µA)
3 of 3
QW-R203-020.B
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