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BU931Z

Description
10 A, 500 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size102KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

BU931Z Overview

10 A, 500 V, NPN, Si, POWER TRANSISTOR

BU931Z Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current10 A
Maximum Collector-Emitter Voltage500 V
Processing package description铅 FREE, TO-3P, 3 PIN
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureDarlington WITH BUILT-IN diode AND resistor
Number of components1
transistor applicationsamplifier
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor300
UNISONIC TECHNOLOGIES CO., LTD
BU931Z
NPN POWER DARLINGTON
FEATURES
* High Operating Junction Temperature
* High Voltage Ignition Coil Driver
* Very Rugged Bipolar Technology
NPN SILICON TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
1
TO-3P
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BU931ZL-T3P-T
BU931ZG-T3P-T
Package
TO-3P
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 2
QW-R214-015,D

BU931Z Related Products

BU931Z BU931ZL-T3P-T BU931ZG-T3P-T BU931Z_10
Description 10 A, 500 V, NPN, Si, POWER TRANSISTOR 10 A, 500 V, NPN, Si, POWER TRANSISTOR 10 A, 500 V, NPN, Si, POWER TRANSISTOR 10 A, 500 V, NPN, Si, POWER TRANSISTOR
Number of terminals 3 3 3 3
Terminal form THROUGH-hole THROUGH-HOLE THROUGH-HOLE THROUGH-hole
Terminal location single SINGLE SINGLE single
Number of components 1 1 1 1
transistor applications amplifier AMPLIFIER AMPLIFIER amplifier
Transistor component materials silicon SILICON SILICON silicon
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