UNISONIC TECHNOLOGIES CO., LTD
D882SS
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High Current Output up to 3A
* Low Saturation Voltage
* Complement to B772SS
NPN SILICON TRANSISTOR
APPLICATIONS
* Audio Power Amplifier
* DC-DC Convertor
* Voltage Regulator
ORDERING INFORMATION
Normal
D882SS -x-AE3-R
Ordering Number
Lead Free
Halogen Free
D882SSL-x-AE3-R D882SSG -x-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-018,D
D882SS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Ta=25°C
Collector Dissipation
T
C
=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C, unless otherwise specified )
RATINGS
40
30
5
3
7
0.6
350
10
UNIT
V
V
V
A
A
A
mW
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
TYP
MAX
UNIT
V
V
V
nA
nA
1000
1000
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-018,D
D882SS
TYPICAL CHARACTERISTICS
Static Characteristics
150
Collector Current, Ic (A)
1.6
I
B
=9mA
Derating, I
C
(%)
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
0.4
0
0
I
B
=2mA
I
B
=1mA
4
8
12
16
Collector-Emitter Voltage (V)
Current Gain-Bandwidth Product
Current Gain- Bandwidth Product,
F
T
(MHz)
10
3
NPN SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
1.2
0.8
100
S/
b
lim
ite
n
io
at
ip
ss
Di
d
50
lim
d
ite
20
0
-50
0
50
100
150
Case Temperature, T
C
(°C)
Safe Operating Area
200
10
Collector Current, I
C
(A)
1
0.
10
mS
1m
S
1m
S
10
2
V
CE
=5V
10
0
I
C
(max), DC
I
B
=8mA
10
1
10
-1
I
C
(max), Pulse
10
0
10
-2
10
-1
10
0
10
1
Collector Current, Ic (A)
DC Current Gain
10
3
Saturation Voltage (mV)
10
4
10
-2
10
0
10
1
Collector-Emitter Voltage
Saturation Voltage
10
2
V
BE(SAT)
10
3
DC Current Gain, h
FE
10
2
V
CE
=2V
10
2
V
CE(SAT)
10
1
10
1
10
0
10
0
10
1
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
4
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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D882SS
TYPICAL CHARACTERISTICS(Cont.)
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-018,D
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