SEMICONDUCTOR TECHNICAL DATA
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by MRF1090MA/D
The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
•
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Industry Standard Package
•
Nitride Passivated
•
Gold Metallized for Long Life and Resistance to Metal Migration
•
Internal Input Matching for Broadband Operation
MRF1090MA
90 W PEAK, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Peak (1)
Total Device Dissipation @ T
C
= 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
V
CBO
V
EBO
I
C
P
D
T
stg
Value
70
4.0
6.0
290
1.66
–65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332–04, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 25 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 25 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
70
70
4.0
—
—
—
—
—
—
—
—
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(I
C
= 2.5 Adc, V
CE
= 5.0 Vdc)
h
FE
10
30
—
—
NOTES:
(continued)
1. Pulse Width = 10
µs,
Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
µs
Pulse on Tektronix 576 or equivalent.
REV 9
1
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 50 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
—
12
16
pF
FUNCTIONAL TESTS
(Pulse Width = 10
µs,
Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(V
CC
= 50 Vdc, P
out
= 90 W pk, f = 1090 MHz)
Collector Efficiency
(V
CC
= 50 Vdc, P
out
= 90 W pk, f = 1090 MHz)
Load Mismatch
(V
CC
= 50 Vdc, P
out
= 90 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
G
PB
η
ψ
No Degradation in Power Output
8.4
35
10.8
40
—
—
dB
%
+
C2
L1
L2
C3
C4
+
-
50 Vdc
RF
INPUT
Z1
Z2
Z3
Z4
DUT
Z5
Z6
Z7
Z8
C1
RF
OUTPUT
Z9
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1
µF
C4 — 47
µF/75
V
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z9 — Distributed Microstrip Elements,
See Photomaster
Board Material — 0.031″ Thick Glass Teflon,
ε
r
= 2.5
Figure 1. 1090 MHz Test Circuit
120
Pout , OUTPUT POWER (WATTS pk)
100
1090 MHz
80
60
40
20
1215 MHz
Pout , OUTPUT POWER (WATTS pk)
f = 960 MHz
120
P
in
= 10.5 W pk
100
80
60
40
20
V
CC
= 50 V
t
p
= 10
µs
D = 1%
960
1090
f, FREQUENCY (MHz)
9 W pk
7.5 W pk
6 W pk
4.5 W pk
V
CC
= 50 V
t
p
= 10
µs
D = 1%
0
3
6
9
P
in
, INPUT POWER (WATTS pk)
12
15
1215
Figure 2. Output Power versus Input Power
REV 9
Figure 3. Output Power versus Frequency
2
120
Pout , OUTPUT POWER (WATTS pk)
100
80
60
40
4.5 W pk
20
0
5
10
20
30
15
25
35
V
CC
, SUPPLY VOLTAGE (VOLTS)
40
45
50
6 W pk
f = 1090 MHz
t
p
= 10
µs
D = 1%
P
in
= 10.5 W pk
G PB , POWER GAIN (dB)
9 W pk
7.5 W pk
13
12
11
10
9
8
P
o
= 90 W pk
V
CC
= 50 V
t
p
= 10
µs
D = 1%
960
1090
f, FREQUENCY (MHz)
1215
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
0
+j5.0
+j10
P
out
= 90 W pk V
CC
= 50 V
t
p
= 10
µs
D = 1%
+j15
f
MHz
960
1090
1215
Z
in
Ohms
2.8 + j13.2
7.4 + j11.4
4.7 + j7.5
Z
OL
*
Ohms
7.6 + j3.5
7.6 + j4.0
7.7 + j4.5
5.0
Z
OL
*
1090
1215
1215
Z
in
1090
f = 960 MHz
10
f = 960 MHz
+j20
15
Z
OL
* = Conjugate of the optimum load
Z
OL
* =
impedance into which the device
Z
OL
* =
output operates at a given output
Z
OL
* =
power, voltage, and frequency.
Coordinates in Ohms
Figure 6. Series Equivalent Input/Output Impedance
P
o
= 90 W pk
V
CC
= 50 V
t
p
= 10
µs
D = 1%
f = 1090 MHz
Figure 7. Typical Pulse Performance
REV 9
3
PACKAGE DIMENSIONS
L
M
K
1
2
NOTES:
1. DIMENSION K APPLIES TWO PLACES.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1973.
3
4
D
A
H
F
U
8-32 UNC 2A
J
N
C
–T–
SEATING
PLANE
STYLE 1:
PIN 1.
2.
3.
4.
BASE
EMITTER
BASE
COLLECTOR
DIM
A
B
C
D
E
F
H
J
K
L
M
N
U
MILLIMETERS
MIN
MAX
6.86
7.62
6.10
6.60
16.26
16.76
4.95
5.21
1.40
1.65
2.67
4.32
1.40
1.65
0.08
0.18
15.24
---
2.41
2.67
45
_
NOM
4.97
6.22
2.92
3.68
INCHES
MIN
MAX
0.270
0.300
0.240
0.260
0.640
0.660
0.195
0.205
0.055
0.065
0.105
0.170
0.055
0.065
0.003
0.007
0.600
---
0.095
0.105
45
_
NOM
0.180
0.245
0.115
0.145
E
–B–
0.76 (0.030)
M
T B
M
CASE 332–04
ISSUE D
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 9
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