DATA SHEET
PHOTOCOUPLER
PS2703-1,PS2703-2,PS2703-4
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER VOLTAGE TYPE
−NEPOC
SOP MULTI PHOTOCOUPLER
TM
Series−
DESCRIPTION
The PS2703-1, PS2703-2, PS2703-4 are optically coupled isolators containing a GaAs light emitting diode and an
NPN silicon phototransistor.
Each is mounted in a plastic SOP (Small Outline Package) for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
• High isolation voltage (BV = 3 750 Vr.m.s.)
• High collector to emitter voltage (V
CEO
= 120 V)
• SOP (Small Outline Package) type
• Each isolated channel per package
• High-speed switching (t
r
, t
f
= 10
µ
s TYP.)
• Taping product number (Only-1 type): PS2703-1-E3, E4, F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
• Hibrid IC
• Telephone/FAX
• FA/OA equipment
• Programmable logic controllers
• Power supply
ORDERING INFORMATION
Part Number
PS2703-1
PS2703-2
PS2703-4
PS2703-1-V
PS2703-2-V
PS2703-4-V
Package
4-pin SOP
8-pin SOP
16-pin SOP
4-pin SOP
8-pin SOP
16-pin SOP
VDE0884 specification products (Option)
Safety Standard Approval
Standard specification products
• UL approved
The information in this document is subject to change without notice.
Document No. P11308EJ6V0DS00 (6th edition)
Date Published December 1998 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1988
PS2703-1,PS2703-2,PS2703-4
PACKAGE DIMENSIONS (in millimeters)
4.5 MAX.
PS2703-1
TOP VIEW
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
7.0±0.3
4.4
1.3
2.3 MAX.
0.1±0.1
2.54
0.4
+0.10
–0.05
1.2 MAX.
0.25 M
0.15
+0.10
–0.05
2.0
0.5±0.3
PS2703-2
9.3 MAX.
8
7
6
TOP VIEW
5
1. 3.
2. 4.
5. 7.
6. 8.
1
2
3
4
7.0±0.3
4.4
1.3
Anode
Cathode
Emitter
Collector
2.3 MAX.
0.1±0.1
0.15
+0.10
–0.05
2.0
2.54
0.4
+0.10
–0.05
0.25 M
1.2 MAX.
0.5±0.3
PS2703-4
19.46 MAX.
16
15
TOP VIEW
14
13
12
11
10
9
1
2
3
4
5
6
7
8
1. 3. 5. 7.
2. 4. 6. 8.
9. 11. 13. 15.
10. 12. 14. 16.
Anode
Cathode
Emitter
Collector
7.0±0.3
4.4
1.3
2.3 MAX.
0.1±0.1
0.15
+0.10
–0.05
2.0
0.4
+0.10
–0.05
0.25 M
2.54
1.2 MAX.
0.5±0.3
2
Data Sheet P11308EJ6V0DS00
PS2703-1,PS2703-2,PS2703-4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C, unless otherwise specified)
Ratings
Parameter
Symbol
PS2703-1
PS2703-2,
PS2703-4
50
6
0.8
80
1
120
6
30
1.5
150
3 750
–55 to +100
–55 to +150
1.2
120
Unit
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
*1
I
F
V
R
mA
V
mW/°C
mW/ch
A
V
V
mA/ch
mW/°C
mW/ch
Vr.m.s.
°C
°C
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25 °C, RH = 60 % between input and output
Data Sheet P11308EJ6V0DS00
3
PS2703-1,PS2703-2,PS2703-4
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Coupled
Collector to Emitter
Current
Current Transfer Ratio
(I
C
/I
F
)
*1
Symbol
V
F
I
R
C
t
I
CEO
CTR
I
F
= 5 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.1
MAX.
1.4
5
Unit
V
µ
A
pF
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CE
= 120 V
I
F
= 5 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
50
10
30
100
150
80
0.3
10
11
nA
%
400
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
V
CE (sat)
R
I-O
C
I-O
t
r
t
f
I
F
= 10 mA, I
C
= 2 mA
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 2 mA, R
L
= 1 kΩ
V
Ω
0.4
10
10
pF
µ
s
*2
*1
CTR rank (only PS2703-1)
CTR rank
K
CTR (%)
200 to 400
80 to
L
100 to 300
25 to
M
50 to 150
10 to
Conditions
I
F
= 5 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
I
F
= 5 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
I
F
= 5 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
*2
Test circuit for switching time
Pulse Input
I
F
V
CC
PW = 100
µ
s
Duty Cycle = 1/10
In monitor
50
Ω
V
OUT
R
L
= 1 kΩ
4
Data Sheet P11308EJ6V0DS00
PS2703-1,PS2703-2,PS2703-4
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
Diode Power Dissipation P
D
(mW)
75
150
PS2703-1
1.5 mW/˚C
100
PS2703-2,
PS2703-4
1.2 mW/˚C
50
50
25
0
25
50
75
100
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10
10
mA
5 mA
4 mA
Forward Current I
F
(mA)
10
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
Collector Current I
C
(mA)
6
I
F
=
8
3 mA
1
0.1
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
4
2 mA
2
1 mA
0.5 mA
2
4
6
8
10
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
5
Collector Current I
C
(mA)
50 000
10 000
5 000
1 000
500
100
50
10
5
1
0.5
0.1
–60 –40
–20
0
20
40
60
80
100
V
CE
= 40 V
24 V
10 V
I
F
= 25 mA
10 mA
5 mA
2.5 mA
2 mA
1.5 mA
1
0.5
0.5 mA
1 mA
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE (sat)
(V)
Data Sheet P11308EJ6V0DS00
5
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