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BYW73Z)

Description
Rectifier Diode, 1 Element, 3A, 300V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size68KB,3 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BYW73Z) Overview

Rectifier Diode, 1 Element, 3A, 300V V(RRM),

BYW73Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current200 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.2 µs
surface mountNO
BL
GALAXY ELECTRICAL
FAST RECOVERY RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
BYW72(Z)---BYW76(Z)
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 3.0 A
DO - 27
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYW72
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYW73
300
210
300
BYW74
400
280
400
3.0
BYW75
500
350
500
BYW76
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
200.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.1
10.0
100.0
200
32
22
- 55---- +150
- 55---- +150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261050
BL
GALAXY ELECTRICAL
1.

BYW73Z) Related Products

BYW73Z) BYW75(Z) BYW74(Z) BYW76(Z) BYW72(Z)
Description Rectifier Diode, 1 Element, 3A, 300V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 3A, 500V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A
Number of components 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A
Maximum repetitive peak reverse voltage 300 V 500 V 400 V 600 V 200 V
Maximum reverse recovery time 0.2 µs 0.2 µs 0.2 µs 0.2 µs 0.2 µs
surface mount NO NO NO NO NO
package instruction - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
application - FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection - ISOLATED ISOLATED ISOLATED ISOLATED
Diode component materials - SILICON SILICON SILICON SILICON
JEDEC-95 code - DO-27 DO-27 DO-27 DO-27
JESD-30 code - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Phase - 1 1 1 1
Number of terminals - 2 2 2 2
Minimum operating temperature - -55 °C -55 °C -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND ROUND ROUND
Package form - LONG FORM LONG FORM LONG FORM LONG FORM
Maximum reverse current - 10 µA 10 µA 10 µA 10 µA
Terminal form - WIRE WIRE WIRE WIRE
Terminal location - AXIAL AXIAL AXIAL AXIAL
Base Number Matches - 1 1 1 1
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